Nonvolatile memory device using semiconductor nanocrystals and method of forming same
AssigneeInternational Business Machines Corporation
InventorsCharles T. Black, Kathryn Wilder Guarini
Life of this patent
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Abstract
A method of forming a field effect transistor includes forming a source region and a drain region in a semiconductor material, forming a channel region between the source region and the drain region, forming an insulating layer over the channel region, forming a floating gate layer of electrically conducting material over the insulating layer, forming a layer of an insulating material over the floating gate layer, and forming a gate electrode overlying the layer of insulating material.
Claims20
A method of forming a field effect transistor, said method comprising:
- forming a source region and a drain region in a semiconductor material;
- forming a channel region between said source region and said drain region;
- forming an insulating layer over said channel region;
- forming a floating gate layer of an electrically conducting material over said insulating layer;
- forming a layer of an insulating material over said floating gate layer;
- and
- forming a gate electrode overlying said layer of insulating material.
A method of making a uniform nanoparticle array, said method comprising:
- performing a diblock copolymer thin film self assembly over a dielectric on silicon;
- creating a porous polymer film;
- and
- transferring a pattern into said dielectric.
A method of making a nanoparticle array, comprising:
- replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film;
- and
- anisotropically and selectively etching a material on said porous dielectric film.
Dependencies are inferred from the claim text.