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US 12,573,458 B2Granted
Method for forming semiconductor structure with wave shaped erase gate
AssigneeUnited Microelectronics Corp.
InventorsYi-Ning Peng, Hsueh-Chun Hsiao, Tzu-Yun Chang
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Abstract
A method for forming semiconductor structure with wave shaped erase gate, the method including the steps: forming a floating gate having staggered islands on a substrate, forming a erase gate having a wave shape on the substrate at a first side of the floating gate, and forming a word line having the wave shape on the substrate at a second side of the floating gate opposite to the first side.
Claims7
A method of forming a semiconductor structure with wave shaped erase gate, comprising:
- forming a plurality of floating gates having staggered islands on a substrate;
- forming an erase gate having a wave shape on the substrate at a first side of one of the floating gates, wherein the wave shape has first parts connecting to second-one parts and second-two parts, wherein the first parts, the second-one parts and the second-two parts are alternatively arranged, wherein the first parts extend along a second direction, the second-one parts extend along a third direction and the second-two parts extend along a fourth direction, and wherein the third direction and the fourth direction are not orthogonal to the second direction;
- and
- forming a word line having the wave shape on the substrate at a second side of one of the floating gates opposite to the first side;
- and
- forming a word line well in the substrate at the second side before the word line is formed.
3 more elements
Dependencies are inferred from the claim text.