G11C 2216/08
Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons
Official title: Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
G11C2216/08 (Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons) appears on 126 US grants and 76 published applications in this corpus.
Search patents in G11C- Granted patents
- 126
- Published applications
- 76
- Assignees
- 45
- Inventors
- 188
- Latest grant
- 19 Jul 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 5 | 0 |
| 1999 | 7 | 0 |
| 2000 | 11 | 0 |
| 2001 | 18 | 4 |
| 2002 | 11 | 20 |
| 2003 | 16 | 5 |
| 2004 | 10 | 8 |
| 2005 | 5 | 6 |
| 2006 | 6 | 4 |
| 2007 | 6 | 7 |
| 2008 | 4 | 4 |
| 2009 | 4 | 1 |
| 2010 | 1 | 3 |
| 2011 | 2 | 0 |
| 2012 | 2 | 2 |
| 2013 | 1 | 1 |
| 2014 | 3 | 0 |
| 2015 | 0 | 1 |
| 2016 | 4 | 2 |
| 2017 | 1 | 1 |
| 2018 | 0 | 2 |
| 2019 | 1 | 2 |
| 2020 | 2 | 1 |
| 2021 | 0 | 1 |
| 2022 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Ultra-precise tuning of analog neural memory cells in a deep learning artificial neural network19 Jul 2022US 11,393,535 B2Silicon Storage Technology, Inc.
- Quantum dot circuit and a method of characterizing such a circuit22 Dec 2020US 10,872,956 B2Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO
- Memory devices and memory device forming methods14 Jan 2020US 10,535,711 B2Micron Technology, Inc.
- Coupled quantum dot memristor17 Dec 2019US 10,510,956 B2Oxford University Innovation Limited
- Memory devices and memory device forming methods28 Nov 2017US 9,831,287 B2Micron Technology, Inc.
- Ultra-precise tuning of neural memory cells20 Oct 2022US 2022/0336020 A1Silicon Storage Technology, Inc.
- Ultra-precise tuning of analog neural memory cells in a deep learning artificial neural network26 Aug 2021US 2021/0264983 A1Silicon Storage Technology, Inc.
- Quantum dot circuit and a method of characterizing such a circuit23 Apr 2020US 2020/0127096 A1Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO
- Memory Devices, Memory Device Constructions, Constructions, Memory Device Forming Methods, Current Conducting Devices, and Memory Cell Programming Methods12 Sep 2019US 2019/0280046 A1Micron Technology, Inc.
- Coupled quantum dot memristor21 Feb 2019US 2019/0058117 A1Oxford University Innovation Limited
Most cited
By later US patents
- Memory using insulator traps313US 6,545,314 B2Micron Technology, Inc. · 2003
- Semiconductor integrated circuit and nonvolatile memory element299US 6,614,684 B1Hitachi, Ltd. · 2003
- Nano-structure memory device215US 5,714,766 AInternational Business Machines Corporation · 1998
- Electronic gain cell based charge sensor212US 6,953,958 B2Cornell Research Foundation, Inc. · 2005
- Electronic device and method for fabricating an electronic device170US 6,707,098 B2Infineon Technologies AG · 2004