Coupled quantum dot memristor

Abstract

The present disclosure relates to novel memristive devices, uses thereof, and processes for their preparation. In a first aspect, the disclosure provides a quantum memristor, including a first quantum dot (QD1) which is capacitively coupled to a second quantum dot (QD2), a source electrode, a drain electrode, and a bath electrode, wherein the source electrode and the drain electrode are coupled via quantum tunneling to QD1 and the bath electrode is coupled via quantum tunneling to QD2, and wherein QD2 is capacitively coupled to either the source electrode or the drain electrode.

Dependencies are inferred from the claim text.