Back to results
US 2022/0336020 A1Published application
Ultra-precise tuning of neural memory cells
AssigneeSilicon Storage Technology, Inc.
InventorsSteven Lemke, Hieu Van Tran, Yuri Tkachev, Louisa Schneider, Henry A. Om'mani, Thuan Vu, Nhan Do, Vipin Tiwari
Life of this patent
Estimating the term…
Abstract
Examples for ultra-precise tuning of a selected memory cell are disclosed. In one example, a method of programming a first memory cell in a neural memory to a target value is disclosed, the method comprising programming a second memory cell by applying programming voltages to terminals of the second memory cell; and determining if an output of the first memory cell has reached the target value.
Claims22
A method of programming a first memory cell in a neural memory to a target value, comprising:
- programming a second memory cell by applying programming voltages to terminals of the second memory cell;
- and
- determining if an output of the first memory cell has reached the target value.
Dependencies are inferred from the claim text.