G11C 2216/10
Floating gate memory cells with a single polysilicon layer
G11C2216/10 (Floating gate memory cells with a single polysilicon layer) appears on 283 US grants and 244 published applications in this corpus.
Search patents in G11C- Granted patents
- 283
- Published applications
- 244
- Assignees
- 106
- Inventors
- 379
- Latest grant
- 13 Jan 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 4 | 0 |
| 1998 | 1 | 0 |
| 1999 | 6 | 0 |
| 2000 | 18 | 0 |
| 2001 | 12 | 2 |
| 2002 | 6 | 8 |
| 2003 | 16 | 12 |
| 2004 | 15 | 22 |
| 2005 | 16 | 16 |
| 2006 | 16 | 16 |
| 2007 | 13 | 21 |
| 2008 | 16 | 28 |
| 2009 | 14 | 21 |
| 2010 | 23 | 14 |
| 2011 | 13 | 9 |
| 2012 | 12 | 9 |
| 2013 | 14 | 9 |
| 2014 | 8 | 2 |
| 2015 | 5 | 7 |
| 2016 | 9 | 12 |
| 2017 | 4 | 6 |
| 2018 | 5 | 1 |
| 2019 | 3 | 7 |
| 2020 | 8 | 6 |
| 2021 | 3 | 9 |
| 2022 | 4 | 1 |
| 2023 | 5 | 4 |
| 2024 | 1 | 1 |
| 2025 | 1 | 1 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory cell13 Jan 2026US 12,526,992 B2STMicroelectronics International N. V.
- Memory cell with contiguous P-well and N-well structures14 Oct 2025US 12,446,218 B2STMicroelectronics S,r.l.
- Non-volatile memory cell with single poly, floating gate extending over two wells19 Nov 2024US 12,148,473 B2STMicroelectronics International N. V.
- Erasable programmable single-poly non-volatile memory cell and associated array structure14 Nov 2023US 11,818,887 B2eMemory Technology Inc.
- Logic compatible flash memory programming with a pulse width control scheme4 Jul 2023US 11,694,751 B2Semibrain Inc.
- Non-volatile memory cell with single poly floating gate and contact control gate13 Nov 2025US 2025/0351346 A1STMicroelectronics International N. V.
- Memory cell29 Aug 2024US 2024/0292612 A1STMicroelectronics International N. V.
- Non-volatile memory cell12 Oct 2023US 2023/0328979 A1STMicroelectronics S,r.l.
- Method of forming pairs of three-gate non-volatile flash memory cells using two polysilicon deposition steps27 Jul 2023US 2023/0238453 A1Silicon Storage Technology, Inc.
- Erasable programmable single-poly non-volatile memory cell and associated array structure20 Apr 2023US 2023/0119398 A1eMemory Technology Inc.
Most cited
By later US patents
- Semiconductor integrated circuit and nonvolatile memory element299US 6,614,684 B1Hitachi, Ltd. · 2003
- Floating gate inverter type memory cell and array174US 8,378,407 B2Tower Semiconductor Ltd. · 2013
- Semiconductor integrated circuit and nonvolatile memory element156US 6,771,538 B2Renesas Technology Corp. · 2004
- Complementary low power non-volatile reconfigurable EEcell123US 5,272,368 AAltera Corporation · 1993
- Compositions and methods for enhancing corticosteroid delivery111US 6,765,001 B2Medicis Pharmaceutical Corporation · 2004