Transistor and method for manufacturing the same

A method, comprising:

• forming a substrate that includes a lightly doped drain portion and a doped portion directly under the lightly doped drain portion,
• wherein the doped portion has a conductivity that is higher than a conductivity of the lightly doped drain portion;
• depositing a tunneling layer on the substrate, the tunneling layer having a first portion and a second portion;
• depositing a first conductive structure on the first portion of the tunneling layer,
• wherein the first conductive structure is disposed over at least a portion of the lightly doped drain portion;
• depositing a dielectric structure on a top surface and on side surfaces of the first conductive structure;
• depositing a second conductive structure on the second portion of the tunneling layer,
• wherein the dielectric structure is disposed between a side surface of the second conductive structure and a first side surface of the first conductive structure, and
• wherein the second conductive structure is disposed over at least a portion of the lightly doped drain portion;
• and
• depositing a third conductive structure on an insulating structure,
• wherein the dielectric structure is disposed between a side surface of the third conductive structure and a second side surface of the first conductive structure.

A method, comprising:

• forming a lightly doped drain portion of a substrate of a semiconductor structure;
• forming a doped portion of the substrate directly under the lightly doped drain portion,
• wherein the doped portion has a conductivity that is higher than a conductivity of the lightly doped drain portion;
• forming a first conductive structure over at least a portion of the lightly doped drain portion;
• forming a second conductive structure over at least a portion of the lightly doped drain portion;
• forming a third conductive structure on an insulating structure;
• forming a dielectric structure between the second conductive structure and the first conductive structure and between the first conductive structure and the third conductive structure;
• and
• depositing a tunneling layer on the substrate, the tunneling layer having a first portion and a second portion,
• wherein at least the second portion of the tunneling layer is deposited on the lightly doped drain portion.