G11C 17/00
Read-only memories programmable only once
Official title: Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
G11C17/00 (Read-only memories programmable only once) appears on 4,843 US grants and 4,009 published applications in this corpus.
Search patents in G11C- Granted patents
- 4,843
- Published applications
- 4,009
- Assignees
- 725
- Inventors
- 5,819
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 20 | 0 |
| 1977 | 32 | 0 |
| 1978 | 25 | 0 |
| 1979 | 23 | 0 |
| 1980 | 32 | 0 |
| 1981 | 22 | 0 |
| 1982 | 24 | 0 |
| 1983 | 42 | 0 |
| 1984 | 41 | 0 |
| 1985 | 32 | 0 |
| 1986 | 28 | 0 |
| 1987 | 39 | 0 |
| 1988 | 33 | 0 |
| 1989 | 31 | 0 |
| 1990 | 27 | 0 |
| 1991 | 26 | 0 |
| 1992 | 24 | 0 |
| 1993 | 34 | 0 |
| 1994 | 49 | 0 |
| 1995 | 58 | 0 |
| 1996 | 51 | 0 |
| 1997 | 54 | 0 |
| 1998 | 82 | 0 |
| 1999 | 80 | 0 |
| 2000 | 86 | 0 |
| 2001 | 87 | 27 |
| 2002 | 114 | 92 |
| 2003 | 117 | 166 |
| 2004 | 145 | 161 |
| 2005 | 128 | 149 |
| 2006 | 113 | 183 |
| 2007 | 153 | 191 |
| 2008 | 152 | 235 |
| 2009 | 158 | 182 |
| 2010 | 183 | 160 |
| 2011 | 158 | 136 |
| 2012 | 156 | 160 |
| 2013 | 167 | 162 |
| 2014 | 175 | 148 |
| 2015 | 170 | 198 |
| 2016 | 224 | 175 |
| 2017 | 213 | 177 |
| 2018 | 166 | 158 |
| 2019 | 154 | 148 |
| 2020 | 150 | 127 |
| 2021 | 132 | 129 |
| 2022 | 124 | 148 |
| 2023 | 139 | 196 |
| 2024 | 146 | 159 |
| 2025 | 154 | 152 |
| 2026 | 70 | 90 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 17/14In which contents are determined by selectively establishing, breaking or modifying connecting3,799
- G11C 17/08Read-only memories programmable only once: using semiconductor devices1,027
- G11C 17/06Read-only memories programmable only once: using diode elements160
- G11C 17/02Read-only memories programmable only once: using magnetic or inductive elements55
- G11C 17/04Read-only memories programmable only once: using capacitive elements37
- G11C 17/005Read-only memories programmable only once: with a storage element common to a4
Recent patents
- High-density and high-voltage-tolerable pure core memory cell29 Sep 2026US 12,749,547 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Bit selection for power reduction in stacking structure during memory programming29 Sep 2026US 12,749,548 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing the same22 Sep 2026US 12,744,097 B2Taiwan Semiconductor Manufacturing Company.Ltd
- One time programming memory cell with gate-all-around transistor for physically unclonable function technology15 Sep 2026US 12,740,056 B2eMemory Technology Inc.
- One time programming memory including forksheet transistors and using physically unclonable function technology15 Sep 2026US 12,740,112 B2eMemory Technology Inc.
- 1.5T OTP Memory And Method For Preparing Same8 Oct 2026US 2026/0311784 A1Shanghai Huali Integrated Circuit Corporation
- One-time programmable memory devices with heater devices and methods for manufacturing and operating the same8 Oct 2026US 2026/0311785 A1Taiwan Semiconductor Manufacturing Company.Ltd
- 3d efuse with data poison8 Oct 2026US 2026/0311786 A1Advanced Micro Devices, Inc.
- Memory device operating method8 Oct 2026US 2026/0313888 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Dynamic random-access memory (dram) convertible to permanent storage1 Oct 2026US 2026/0301832 A1NXP USA, Inc.
Most cited
By later US patents
- Vertically stacked field programmable nonvolatile memory and method of fabrication1,159US 6,034,882 AMatrix Semiconductor, Inc. · 2000
- Three-dimensional read-only memory750US 5,835,396 A1998
- Vertically stacked field programmable nonvolatile memory and method of fabrication621US 6,185,122 B2Matrix Semiconductor, Inc. · 2001
- Scannable sense amplifier circuit421US 5,915,084 AAdvanced Micro Devices, Inc. · 1999
- Electrically addressable passive device, method for electrical addressing of the same and uses of the device and the method377US 6,055,180 AThin Film Electronics ASA · 2000