G11C 17/02
Read-only memories programmable only once: using magnetic or inductive elements
Official title: using magnetic or inductive elements (G11C17/14 takes precedence)
G11C17/02 (Read-only memories programmable only once: using magnetic or inductive elements) appears on 55 US grants and 66 published applications in this corpus.
Search patents in G11C- Granted patents
- 55
- Published applications
- 66
- Assignees
- 31
- Inventors
- 124
- Latest grant
- 12 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 1 |
| 2004 | 1 | 1 |
| 2005 | 1 | 0 |
| 2006 | 0 | 1 |
| 2007 | 1 | 3 |
| 2008 | 0 | 3 |
| 2009 | 1 | 1 |
| 2010 | 3 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 1 |
| 2013 | 1 | 1 |
| 2014 | 4 | 7 |
| 2015 | 5 | 4 |
| 2016 | 4 | 2 |
| 2017 | 5 | 6 |
| 2018 | 5 | 2 |
| 2019 | 4 | 2 |
| 2020 | 3 | 4 |
| 2021 | 2 | 2 |
| 2022 | 1 | 3 |
| 2023 | 2 | 4 |
| 2024 | 5 | 4 |
| 2025 | 2 | 8 |
| 2026 | 2 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Systems and methods for ensuring high read reliability in pre-programmed memory cells12 May 2026US 12,626,742 B2Veevx, Inc.
- Read and write enhancements for arrays of superconducting memory cells14 Apr 2026US 12,603,126 B2
- Operating method of physically unclonable function magnetic memory device29 Jul 2025US 12,375,307 B2Korea University Research and Business Foundation
- Memory with one-time programmable (OTP) cells11 Feb 2025US 12,224,024 B2NXP USA, Inc.
- One time programmable (OTP) magnetoresistive random-access memory (MRAM)17 Dec 2024US 12,170,105 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Magnetic memory device18 Jun 2026US 2026/0171130 A1Samsung Electronics Co., Ltd.
- Magnetic memory device7 May 2026US 2026/0128110 A1Samsung Electronics Co., Ltd.
- Memory Device with Low Wire Resistance and Method of Manufacturing the Same30 Apr 2026US 2026/0120784 A1
- Memory device8 Jan 2026US 2026/0011383 A1Samsung Electronics Co., Ltd.
- Memory device including otp (one time programmable) cells and method of operating the same8 Jan 2026US 2026/0011384 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Magnetic systems with irreversible characteristics and a method of manufacturing and repairing and operating such systems95US 6,501,678 B1Koninklijke Philips Electronics N. V. · 2002
- Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink37US 9,070,437 B22015
- One-time programming (OTP) magneto-resistive random access memory (MRAM) bit cells in a physically unclonable function (PUF) memory in breakdown to a memory state from a previous read operation to provide PUF operations23US 10,311,930 B1QUALCOMM Incorporated · 2019
- Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink20US 9,478,306 B2Attopsemi Technology Co., LTD · 2016
- One-time programmable device with integrated heat sink17US 9,767,915 B2Attopsemi Technology Co., LTD · 2017