Magnetic memory device

A magnetic memory device comprising:

• a cell array comprising:
• a memory cell comprising a first magnetic tunnel junction element and a first cell transistor, and
• an OTP cell comprising a second magnetic tunnel junction element and a second cell transistor;
• and
• a control circuit configured to:
• apply a write current to the memory cell to perform a write operation on the memory cell, and
• apply the write current to the OTP cell to perform a read operation on the OTP cell.

A magnetic memory device, comprising:

• a cell array comprising a reference cell including a first magnetic tunnel junction element, a memory cell, and an OTP cell including a second magnetic tunnel junction element;
• and
• a control circuit configured to:
• perform a read operation on the memory cell using the reference cell,
• apply a write current to the OTP cell, and
• perform a read operation on the OTP cell based on a change in a magnitude of a current flowing through the reference cell or the write current.