Magnetic memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsDae Shik KIM, Kyoung Ho KIM, Ji Hun BYUN
Life of this patent
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Abstract
Provided is a magnetic memory device. The magnetic memory device includes a memory cell including a first magnetic tunnel junction element, a One-Time-Programmable (OTP) cell including a second magnetic tunnel junction element, a switching element between a first bit line connected to the memory cell and a second bit line connected to the OTP cell, and a peripheral circuit configured to control the switching element to disconnect the first and second bit lines from each other in response to a write voltage being applied to the OTP cell.
Claims20
A magnetic memory device comprising:
- a memory cell including a first magnetic tunnel junction element;
- a One-Time-Programmable (OTP) cell including a second magnetic tunnel junction element;
- a switching element between a first bit line connected to the memory cell and a second bit line connected to the OTP cell;
- and
- a peripheral circuit configured to control the switching element to disconnect the first bit line and the second bit line from each other in response to a write voltage being applied to the OTP cell.
A magnetic memory device comprising:
- a memory cell connected to a first bit line and including a first magnetic tunnel junction element;
- a One-Time-Programmable (OTP) cell connected to a second bit line and including a second magnetic tunnel junction element;
- a bit line connection transistor between the first bit line and the second bit line in a first direction in which the first bit line and the second bit line extend;
- and
- a peripheral circuit configured to control the bit line connection transistor,
- wherein the peripheral circuit is configured to:
- control the bit line connection transistor to be turned off in response to a first write voltage being applied to the OTP cell;
- and
- control the bit line connection transistor to be turned on in response to a second write voltage being applied to the memory cell.
A magnetic memory device comprising a memory cell and a One-Time-Programmable (OTP) cell,
- wherein the memory cell includes:
- a first magnetic tunnel junction element connected to a first bit line;
- and
- a first cell transistor connecting a first source line and the first magnetic tunnel junction element to each other and connected to a first word line,
- wherein the OTP cell includes:
- a second magnetic tunnel junction element connected to a second bit line;
- a cell array connecting a second source line and the second magnetic tunnel junction element to each other, wherein the cell array includes a second cell transistor, a third cell transistor, and a fourth cell transistor that are connected to a second word line, a third word line, and a fourth word line, respectively;
- a switching element between the first bit line and the second bit line in a first direction in which the first bit line and the second bit line extend;
- a first via structure on one side of the switching element and adjacent to the memory cell;
- a second via structure on another side of the switching element and adjacent to the OTP cell;
- and
- a peripheral circuit closer to the OTP cell than to the memory cell in the first direction,
- wherein the peripheral circuit is configured to control the switching element to electrically disconnect the first bit line and the second bit line from each other in response to a first write operation being performed on the OTP cell.
Dependencies are inferred from the claim text.