G11C 17/04
Read-only memories programmable only once: using capacitive elements
Official title: using capacitive elements (G11C17/06, G11C17/14 take precedence)
G11C17/04 (Read-only memories programmable only once: using capacitive elements) appears on 37 US grants and 26 published applications in this corpus.
Search patents in G11C- Granted patents
- 37
- Published applications
- 26
- Assignees
- 33
- Inventors
- 76
- Latest grant
- 23 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 0 | 1 |
| 2005 | 2 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 1 | 2 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 1 |
| 2012 | 0 | 1 |
| 2013 | 1 | 0 |
| 2014 | 0 | 1 |
| 2015 | 1 | 1 |
| 2016 | 3 | 4 |
| 2017 | 2 | 1 |
| 2018 | 1 | 0 |
| 2019 | 2 | 3 |
| 2020 | 1 | 1 |
| 2021 | 0 | 0 |
| 2022 | 0 | 2 |
| 2023 | 2 | 2 |
| 2024 | 0 | 1 |
| 2025 | 1 | 2 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Back-end-of-line compatible physically unclonable function memory device and system23 Dec 2025US 12,506,093 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Small-area side-capacitor read-only memory device, memory array and method for operating the same29 Aug 2023US 11,742,039 B2Yield Microelectronics Corp.
- One-time programmable memory read-write circuit20 Jun 2023US 11,682,466 B2Changxin Memory Technologies, Inc.
- Memory circuit having pseudo ground21 Apr 2020US 10,629,270 B2Richtek Technology Corporation
- Floating gate OTP/MTP structure and method for producing the same25 Jun 2019US 10,332,597 B2Globalfoundries Singapore Pte. Ltd.
- Dynamic random-access memory (dram) convertible to permanent storage1 Oct 2026US 2026/0301832 A1NXP USA, Inc.
- Magnetic tunnel junction anti-fuse including non-magnetic stack18 Sep 2025US 2025/0292850 A1Everspin Technologies, Inc.
- One-time programmable memory cell11 Sep 2025US 2025/0287584 A1STMicroelectronics International N. V.
- Semiconductor memory devices and methods of manufacturing thereof21 Nov 2024US 2024/0387406 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Small-area side-capacitor read-only memory device, memory array and method for operating the same20 Jul 2023US 2023/0230646 A1Yield Microelectronics Corp.
Most cited
By later US patents
- Non-volatile memory device including a micro-mechanical storage element144US 4,979,149 ALGZ Landis & Gyr Zug AG · 1990
- Peristaltic electrostatic binary device47US 4,794,370 ABos-Knox, Ltd. · 1988
- Memory based on arrays of capacitors43US 5,410,504 A1995
- Memory apparatus with dynamic memory cells having different capacitor values37US 5,706,225 ASiemens Aktiengesellschaft · 1998
- Integrated circuit comprising a programmable cell29US 5,086,331 AU. S. Philips Corporation · 1992