Memory circuit having pseudo ground

A memory circuit, which is configured to operably perform a high-voltage operation or a low-voltage operation to access data, the memory circuit comprising:

• a memory unit, which is configured to operably store the data;
• a memory control circuit, which is configured to operably control the memory unit;
• and
• a pseudo ground voltage generation circuit coupled to the memory control circuit, wherein the memory control circuit and the pseudo ground voltage generation circuit are commonly coupled to a pseudo ground node;
• wherein the memory control circuit includes:
• a level shifter circuit coupled to a variable supply voltage, the level shifter circuit being configured to operably generate a driving signal according to a first address signal;
• and
• a driver circuit coupled to the level shifter circuit, the pseudo ground node and the memory unit, wherein the driver circuit is powered by the variable supply voltage and generates an access signal according to the driving signal, to perform the high-voltage operation or the low-voltage operation on the memory unit;
• wherein, under the high-voltage operation, the variable supply voltage provides a first supply voltage level, so that a high level of the access signal corresponds to the first supply voltage level, and wherein, under the high-voltage operation, the pseudo ground voltage generation circuit provides a pseudo ground voltage level at the pseudo ground node, wherein a voltage difference between the first supply voltage level and the pseudo ground voltage level is smaller than a withstand voltage of the driver circuit;
• wherein, under the low-voltage operation, the variable supply voltage provides a second supply voltage level, so that the high level of the access signal corresponds to the second supply voltage level, and wherein, under the low-voltage operation, the pseudo ground voltage generation circuit electrically connects the pseudo ground node to a common ground voltage level.