Non-volatile memory device including a micro-mechanical storage element

A memory device for storing digital electronic signals comprising:

• at least one micromechanical memory element, said memory element comprising a support having a recess defined therein, and a curved mechanical component bridging said recess and having first and second stable positions corresponding to first and second digital logic values, said first stable position being concave down towards said support and the said second stable position being convex up away from said support,
• a conductive barrier layer located on a surface of said support under said mechanical component,
• writing means for creating an attractive force between said mechanical component and said barrier layer to cause said mechanical component to occupy said first stable position and for creating a repulsive force between said mechanical component and said barrier layer to cause said mechanical component to occupy said second stable position, said writing means comprising a first MOSFET which acts as switch between said mechanical component and a first input line and a second MOSFET which acts as a switch between said barrier layer and a second input line, and
• electronic reading circuitry coupled to said micromechanical memory element for electronically detecting the one of said first and second stable positions that said mechanical components is in, and for producing an electronic output signal indicative thereof and corresponding to one of said digital logic values.