G11C 17/06
Read-only memories programmable only once: using diode elements
Official title: using diode elements (G11C17/14 takes precedence)
G11C17/06 (Read-only memories programmable only once: using diode elements) appears on 160 US grants and 153 published applications in this corpus.
Search patents in G11C- Granted patents
- 160
- Published applications
- 153
- Assignees
- 70
- Inventors
- 179
- Latest grant
- 13 Jan 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 4 | 0 |
| 1978 | 5 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 4 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 4 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 5 | 7 |
| 2003 | 6 | 8 |
| 2004 | 5 | 6 |
| 2005 | 4 | 12 |
| 2006 | 2 | 7 |
| 2007 | 10 | 9 |
| 2008 | 6 | 10 |
| 2009 | 10 | 8 |
| 2010 | 8 | 6 |
| 2011 | 10 | 6 |
| 2012 | 5 | 6 |
| 2013 | 4 | 11 |
| 2014 | 10 | 5 |
| 2015 | 9 | 4 |
| 2016 | 6 | 2 |
| 2017 | 6 | 8 |
| 2018 | 3 | 6 |
| 2019 | 3 | 12 |
| 2020 | 0 | 2 |
| 2021 | 2 | 6 |
| 2022 | 3 | 5 |
| 2023 | 4 | 1 |
| 2024 | 2 | 2 |
| 2025 | 2 | 2 |
| 2026 | 1 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- One-time programmable memory circuit, one-time programmable memory and operation method thereof13 Jan 2026US 12,525,307 B2eRaytroniks Co., Ltd.
- Memory circuit and method of operating same6 May 2025US 12,293,799 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Multiply accumulate circuit for binary neural network system25 Mar 2025US 12,260,318 B2eMemory Technology Inc.
- Formation of stacked lateral semiconductor devices and the resulting structures24 Dec 2024US 12,176,209 B2TC Lab, Inc.
- Anti-fuse memory cell circuit, array circuit and reading and writing method thereof30 Jan 2024US 11,887,682 B2Changxin Memory Technologies, Inc.
- Dynamic random-access memory (dram) convertible to permanent storage1 Oct 2026US 2026/0301832 A1NXP USA, Inc.
- Memories containing an array of read-only memory cells and methods of their fabrication and operation23 Apr 2026US 2026/0113933 A1Micron Technology, Inc.
- Memory circuit and method of operating same21 Aug 2025US 2025/0266113 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Formation of Stacked Lateral Semiconductor Devices and the Resulting Structures17 Apr 2025US 2025/0125146 A1TC Lab, Inc.
- One-time programmable memory cell and method for managing the logic state of the memory cell29 Aug 2024US 2024/0292610 A1STMicroelectronics International N. V.
Most cited
By later US patents
- Vertically stacked field programmable nonvolatile memory and method of fabrication305US 6,483,736 B2Matrix Semiconductor, Inc. · 2002
- Three-dimensional-memory-based self-test integrated circuits and methods259US 7,304,355 B22007
- Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer146US 4,569,121 ASignetics Corporation · 1986
- Structure capable of forming a diode and associated conductive path114US 3,990,098 AE. I. Du Pont de Nemours and Company · 1976
- Memory array incorporating noise detection line94US 6,522,594 B1Matrix Semiconductor, Inc. · 2003