One-time programmable memory circuit, one-time programmable memory and operation method thereof
AssigneeeRaytroniks Co., Ltd.
InventorE Ray Hsieh
Life of this patent
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Abstract
The present disclosure provides a one-time programmable memory, which includes a one-time programmable (OTP) diode and a control field effect transistor (FET). One end of the OTP diode is electrically connected to a source line. The control FET includes a gate, a first source/drain and a second source/drain, the gate of the control FET is electrically connected to a word line, the first source/drain of the control FET is electrically connected to a bit line, and the second source/drain of the control FET is electrically connected to another of the OTP diode.
Claims7
A one-time programmable (OTP) memory, comprising:
- an OTP diode having one end electrically connected to a source line;
- and
- a control field effect transistor (FET) comprising a gate, a first source/drain and a second source/drain, wherein the gate of the control FET is electrically connected to a word line, and the first source/drain of the control FET is electrically connected to a bit line, and the second source/drain of the control FET is electrically connected to another end of the OTP diode,
- wherein the control FET is an N-type control FET or a P-type control FET, and the OTP diode is an NPN diode, a NIN diode, a gate-floating N-type FET, a PNP diode, a PIP diode or a gate-floating P-type FET.
A one-time programmable memory circuit, comprising:
- a plurality of memory units arranged in an array, each of the memory units comprising a one-time programmable memory, and the one-time programmable memory comprising:
- an OTP diode having one end electrically connected to a source line;
- and
- a control FET comprising a gate, a first source/drain and a second source/drain, wherein the gate of the control FET is electrically connected to a word line, and the first source/drain of the control FET is electrically connected to a bit line, and the second source/drain of the control FET is electrically connected to another end of the OTP diode,
- wherein the control FET is an N-type control FET or a P-type control FET, and the OTP diode is an NPN diode, a NIN diode, a gate-floating N-type FET, a PNP diode, a PIP diode or a gate-floating P-type FET.
An operation method of a one-time programmable memory, the one-time programmable memory comprising an OTP diode and a control FET connected in series, and the operation method comprising steps of:
- when programming the one-time programmable memory, applying a control voltage to a word line, applying a programming voltage to a bit line, and applying a zero voltage to a source line, wherein one end of the OTP diode is electrically connected to the source line, a gate of the control FET is electrically connected to the word line, a first source/drain of the control FET is electrically connected to the bit line, a second source/drain of the control FET is electrically connected to another end of the OTP diode,
- wherein the control FET is an N-type control FET or a P-type control FET, and the OTP diode is an NPN diode, a NIN diode, a gate-floating N-type FET, a PNP diode, a PIP diode or a gate-floating P-type FET.
Dependencies are inferred from the claim text.