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US 12,176,209 B2Granted
Formation of stacked lateral semiconductor devices and the resulting structures
AssigneeTC Lab, Inc.
InventorHarry Luan
Life of this patent
Estimating the term…
Abstract
A method of making stacked lateral semiconductor devices is disclosed. The method includes depositing a stack of alternating layers of different materials. Slots or holes are cut through the layers for subsequent formation of single crystal semiconductor fences or pillars. When each of the alternating layers of one material are removed space is provided for formation of single crystal semiconductor devices between the remaining layers. The devices are doped as the single crystal silicon is formed.
Claims6
A multi-layer semiconductor memory cell array, comprising:
- a semiconductor substrate;
- a first m by n array of semiconductor memory cells extending in a first x direction-y direction plane and electrically connected in a x direction to first terminal lines;
- at least one second m by n array of the semiconductor memory cells extending in the a second x direction-y direction plane and electrically connected in the x direction to the first terminal lines, the at least one second m by n array of the semiconductor memory cells being stacked vertically above the first m by n array of the semiconductor memory cells;
- and
- each of the semiconductor memory cells comprising only a single crystal silicon, and wherein m and n are integers.
2 more elements
Dependencies are inferred from the claim text.