Memory circuit and method of operating same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMeng-Sheng Chang, Chia-En Huang, Yih Wang
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Abstract
A method of operating a memory circuit includes turning on a first programming device and turning on a first selection device thereby causing a first current to flow through a first fuse element. The first fuse element is coupled between the first selection device and the first programming device. The method further includes turning off a second programming device and turning off a second selection device, and blocking the first current from flowing through a second fuse element that is coupled between the second selection device and the first programming device.
Claims20
A method of operating a memory circuit, comprising
- turning on a first programming device and turning on a first selection device thereby causing a first current to flow through a first fuse element, wherein the first fuse element is coupled between the first selection device and the first programming device;
- turning off a second programming device and turning off a second selection device;
- and
- blocking the first current from flowing through a second fuse element that is coupled between the second selection device and the first programming device;
- wherein the first fuse element is coupled in series with a first diode;
- the first diode includes a first via;
- a first connecting end of the first programming device is coupled to a first conductor in a first metal layer, and the first conductor is coupled to a second conductor in a second metal layer by a second via, the second metal layer being above the first metal layer;
- and
- the first fuse element includes a third conductor in a third metal layer above the first metal layer and the second metal layer.
A method of operating a memory circuit, comprising
- turning on a first programming device and turning on a first selection device thereby causing a first current to flow through a first fuse element and a first diode in a first path, wherein the first fuse element and the first diode are coupled between the first selection device and the first programming device;
- turning off a second programming device and turning off a second selection device thereby disrupting a second current from flowing through a second path between the second selection device and the second programming device;
- and
- blocking the first current from flowing through a second fuse element coupled between the second selection device and the first programming device;
- the first diode includes a first via;
- a first connecting end of the first programming device is coupled to a first conductor in a first metal layer, and the first conductor is coupled to a second conductor in a second metal layer by a second via, the second metal layer being above the first metal layer;
- and
- the first fuse element includes a third conductor in a third metal layer above the first metal layer and the second metal layer.
A method of operating a memory circuit, comprising
- causing a first current to flow through a first fuse element, wherein the first fuse element is coupled between a first selection device and a first programming device, the causing the first current to flow through the first fuse element comprises:
- enabling the first programming device in response to a first word line voltage;
- and
- enabling the first selection device in response to a first bit line voltage;
- turning off a second programming device and turning off a second selection device;
- and
- blocking the first current from flowing through a second fuse element that is coupled between the second selection device and the first programming device;
- wherein the first fuse element is coupled in series with a first diode;
- the first diode includes a first via;
- a first connecting end of the first programming device is coupled to a first conductor in a first metal layer, and the first conductor is coupled to a second conductor in a second metal layer by a second via, the second metal layer being above the first metal layer;
- and
- the first fuse element includes a third conductor in a third metal layer above the first metal layer and the second metal layer.
Dependencies are inferred from the claim text.