Method of fabricating a programmable read-only memory cell incorporating an antifuse utilizing deposition of amorphous semiconductor layer

A method of fabricating a semiconductive programmable read only memory cell, comprising:

• (a) locally oxidizing selected surface regions of a body of crystalline semiconductor of first type conductivity to produce a plurality of isolated semiconductor regions in said body;
• (b) introducing dopant impurities of opposite second type conductivity in a first one of said isolated semiconductor regions to produce a first region of second type conductivity forming a semiconductive junction with said body at a location beneath the surface of said body;
• (c) depositing a thin amorphous layer of silicon over the surface of said first region and coupled therewith to produce an antifuse element that is electrically and irreversibly switchable from high resistance state to low resistance state;
• and
• (d) introducing dopant impurities of first type conductivity in a second one of said isolated semiconductor regions lying adjacent to said first isolated region to form a low resistance contact region at the surface of said body.