G11C 16/3468
Prevention of overerasure or overprogramming
Official title: {Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing}
G11C16/3468 (Prevention of overerasure or overprogramming) appears on 747 US grants and 636 published applications in this corpus.
Search patents in G11C- Granted patents
- 747
- Published applications
- 636
- Assignees
- 149
- Inventors
- 1,015
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 6 | 0 |
| 1995 | 5 | 0 |
| 1996 | 12 | 0 |
| 1997 | 14 | 0 |
| 1998 | 19 | 0 |
| 1999 | 15 | 0 |
| 2000 | 15 | 0 |
| 2001 | 18 | 11 |
| 2002 | 22 | 24 |
| 2003 | 33 | 27 |
| 2004 | 21 | 37 |
| 2005 | 32 | 37 |
| 2006 | 41 | 46 |
| 2007 | 40 | 41 |
| 2008 | 37 | 38 |
| 2009 | 31 | 25 |
| 2010 | 28 | 20 |
| 2011 | 21 | 21 |
| 2012 | 22 | 18 |
| 2013 | 23 | 21 |
| 2014 | 22 | 28 |
| 2015 | 18 | 5 |
| 2016 | 28 | 23 |
| 2017 | 23 | 22 |
| 2018 | 22 | 11 |
| 2019 | 12 | 17 |
| 2020 | 24 | 27 |
| 2021 | 38 | 45 |
| 2022 | 25 | 31 |
| 2023 | 27 | 29 |
| 2024 | 20 | 14 |
| 2025 | 18 | 11 |
| 2026 | 4 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 16/3481Circuits or methods to verify correct programming of nonvolatile memory cells whilst241
- G11C 16/3477Circuits or methods to prevent overerasing of nonvolatile memory cells177
- G11C 16/3486Circuits or methods to prevent overprogramming of nonvolatile memory cells146
- G11C 16/3472Circuits or methods to verify correct erasure of nonvolatile memory cells whilst109
Recent patents
- Flash memory and testing method thereof15 Sep 2026US 12,738,340 B2Winbond Electronics Corp.
- Memory device and control method thereof1 Sep 2026US 12,725,667 B2Winbond Electronics Corp.
- Non-volatile memory device and erase method thereof4 Aug 2026US 12,700,459 B2Samsung Electronics Co., Ltd.
- Nonvolatile memory device and method of operating a nonvolatile memory device16 Jun 2026US 12,658,268 B2Samsung Electronics Co., Ltd.
- Erase operations in memory devices9 Dec 2025US 12,494,259 B2Yangtze Memory Technologies Co., Ltd.
- Non-volatile memory with smart tail detection read mode without erase time penalty2 Jul 2026US 2026/0188399 A1SanDisk Technologies LLC
- Flash memory apparatus and erasing method thereof4 Jun 2026US 2026/0155185 A1Winbond Electronics Corp.
- Program refresh for non-volatile memory cells30 Apr 2026US 2026/0120779 A1Silicon Storage Technology, Inc.
- Flash memory apparatus and erasing method thereof2 Apr 2026US 2026/0094654 A1Winbond Electronics Corp.
- Erase operations in memory devices19 Mar 2026US 2026/0080958 A1Yangtze Memory Technologies Co., Ltd.
Most cited
By later US patents
- Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state625US 5,774,397 AKabushiki Kaisha Toshiba · 1998
- Non-volatile memory and method with bit line compensation dependent on neighboring operating modes541US 6,956,770 B2SanDisk Corporation · 2005
- Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell325US 6,643,188 B2Kabushiki Kaisha Toshiba · 2003
- Nonvolatile memory and semiconductor device with controlled voltage booster circuit236US 6,542,411 B2Hitachi, Ltd. · 2003
- Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells221US 5,712,815 AAdvanced Micro Devices, Inc. · 1998