G11C 16/3477
Circuits or methods to prevent overerasing of nonvolatile memory cells
Official title: {Circuits or methods to prevent overerasing of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasing}
G11C16/3477 (Circuits or methods to prevent overerasing of nonvolatile memory cells) appears on 177 US grants and 125 published applications in this corpus.
Search patents in G11C- Granted patents
- 177
- Published applications
- 125
- Assignees
- 64
- Inventors
- 266
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 4 | 0 |
| 1995 | 2 | 0 |
| 1996 | 8 | 0 |
| 1997 | 8 | 0 |
| 1998 | 7 | 0 |
| 1999 | 2 | 0 |
| 2000 | 4 | 0 |
| 2001 | 6 | 2 |
| 2002 | 5 | 4 |
| 2003 | 4 | 0 |
| 2004 | 2 | 10 |
| 2005 | 7 | 11 |
| 2006 | 11 | 12 |
| 2007 | 11 | 14 |
| 2008 | 17 | 16 |
| 2009 | 12 | 6 |
| 2010 | 10 | 7 |
| 2011 | 5 | 3 |
| 2012 | 2 | 1 |
| 2013 | 3 | 1 |
| 2014 | 0 | 1 |
| 2015 | 1 | 0 |
| 2016 | 2 | 4 |
| 2017 | 3 | 4 |
| 2018 | 6 | 1 |
| 2019 | 2 | 2 |
| 2020 | 3 | 3 |
| 2021 | 4 | 5 |
| 2022 | 3 | 8 |
| 2023 | 5 | 7 |
| 2024 | 6 | 2 |
| 2025 | 1 | 1 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Non-volatile memory device and erase method thereof4 Aug 2026US 12,700,459 B2Samsung Electronics Co., Ltd.
- Nonvolatile memory device and method of operating a nonvolatile memory device16 Jun 2026US 12,658,268 B2Samsung Electronics Co., Ltd.
- Memory device and erasing method thereof20 May 2025US 12,308,076 B2Winbond Electronics Corp.
- Apparatus and method of performing erase and erase verify operations10 Sep 2024US 12,087,375 B2Micron Technology, Inc.
- Memory device and operating method for performing pre-program operation on over-erasure cells10 Sep 2024US 12,087,376 B2SK hynix Inc.
- Nonvolatile memory device and method of operating a nonvolatile memory device3 Jul 2025US 2025/0218521 A1Samsung Electronics Co., Ltd.
- Memory device and method of operating the same21 Nov 2024US 2024/0386975 A1SK hynix Inc.
- Memory device and erasing method thereof29 Aug 2024US 2024/0290400 A1Winbond Electronics Corp.
- Adaptive erase pulse width modulation based on erase suspend during erase pulse ramping period14 Dec 2023US 2023/0402103 A1Micron Technology, Inc.
- Memory device and method of operating the same10 Aug 2023US 2023/0253058 A1SK hynix Inc.
Most cited
By later US patents
- Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state625US 5,774,397 AKabushiki Kaisha Toshiba · 1998
- Non-volatile semiconductor memory device141US 5,555,204 AKabushiki Kaisha Toshiba · 1996
- Erasure of eeprom memory arrays to prevent over-erased cells127US 5,132,935 A1992
- Circuit and method for conditioning flash memory array107US 6,166,962 AAMIC Technology Corporation · 2000
- Method for bulk (or byte) charging and discharging an array of flash EEPROM memory cells101US 5,491,657 AAdvanced Micro Devices, Inc. · 1996