Adaptive erase pulse width modulation based on erase suspend during erase pulse ramping period

A method comprising:

• causing a first erase pulse to be applied to a memory line of a memory array to perform an erase operation, the memory line being a conductive line coupled to a string of memory cells;
• suspending the erase operation in response to receipt of a suspend command during a ramping period of the first erase pulse;
• recording a suspend voltage level of the first erase pulse when suspended;
• causing the erase operation to be resumed in response to an erase resume command;
• selectively modifying a pulse width of a flattop period of a second erase pulse based on the suspend voltage level;
• and
• causing the second erase pulse to be applied to the memory line during a resume of the erase operation.

A method comprising:

• detecting a suspend command during a ramping period of a first erase pulse that is applied to a memory line of a memory array during an erase operation, the memory line being a conductive line coupled to a string of memory cells;
• determining a suspend voltage level of the first erase pulse;
• causing a discharge of the memory line;
• detecting an erase resume command associated with the erase operation;
• and
• in response to detecting the erase resume command:
• selectively modifying a pulse width of a flattop period of a second erase pulse based on the suspend voltage level;
• and
• causing the second erase pulse to be applied to the memory line.