G11C 16/34
Determination of programming status
Official title: Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
G11C16/34 (Determination of programming status) appears on 12,272 US grants and 12,205 published applications in this corpus.
Search patents in G11C- Granted patents
- 12,272
- Published applications
- 12,205
- Assignees
- 797
- Inventors
- 8,526
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 3 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 3 | 0 |
| 1983 | 6 | 0 |
| 1984 | 6 | 0 |
| 1985 | 6 | 0 |
| 1986 | 3 | 0 |
| 1987 | 4 | 0 |
| 1988 | 8 | 0 |
| 1989 | 12 | 0 |
| 1990 | 12 | 0 |
| 1991 | 9 | 0 |
| 1992 | 15 | 0 |
| 1993 | 23 | 0 |
| 1994 | 30 | 0 |
| 1995 | 47 | 0 |
| 1996 | 81 | 0 |
| 1997 | 89 | 0 |
| 1998 | 110 | 0 |
| 1999 | 124 | 0 |
| 2000 | 128 | 0 |
| 2001 | 136 | 55 |
| 2002 | 141 | 144 |
| 2003 | 158 | 183 |
| 2004 | 148 | 204 |
| 2005 | 177 | 239 |
| 2006 | 216 | 296 |
| 2007 | 294 | 386 |
| 2008 | 323 | 507 |
| 2009 | 361 | 437 |
| 2010 | 390 | 456 |
| 2011 | 431 | 455 |
| 2012 | 456 | 510 |
| 2013 | 486 | 488 |
| 2014 | 589 | 608 |
| 2015 | 626 | 530 |
| 2016 | 682 | 566 |
| 2017 | 603 | 489 |
| 2018 | 522 | 480 |
| 2019 | 582 | 612 |
| 2020 | 685 | 672 |
| 2021 | 648 | 645 |
| 2022 | 659 | 791 |
| 2023 | 650 | 748 |
| 2024 | 670 | 691 |
| 2025 | 560 | 554 |
| 2026 | 353 | 459 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Using non-segregated cells as drain-side select gates for sub-blocks in a memory device6 Oct 2026US 12,755,792 B2Micron Technology, Inc.
- Architecture and method for NAND memory operation6 Oct 2026US 12,755,794 B2Yangtze Memory Technologies Co., Ltd.
- Enhanced read retry (ERR) for data recovery in flash memory6 Oct 2026US 12,755,797 B2SanDisk Technologies LLC
- Method of controlling a semiconductor memory including memory cells and a word line6 Oct 2026US 12,755,800 B2Kioxia Corporation
- Memory, operation method thereof, and memory system6 Oct 2026US 12,755,801 B2Yangtze Memory Technologies Co., Ltd.
- Bias voltage control for sub-block groups in a memory device8 Oct 2026US 2026/0311766 A1Micron Technology, Inc.
- Drift compensation for codewords in memory8 Oct 2026US 2026/0311767 A1Micron Technology, Inc.
- Resample start voltage for calibration in a program operation improvement8 Oct 2026US 2026/0311768 A1Micron Technology, Inc.
- Alternative erase schemes for reliability-risk word lines8 Oct 2026US 2026/0311777 A1Micron Technology, Inc.
- Advanced dummy word line ramp down after program verify for memory devices8 Oct 2026US 2026/0311778 A1SanDisk Technologies LLC
Most cited
By later US patents
- Multi-state EEprom read and write circuits and techniques1,175US 5,172,338 ASunDisk Corporation · 1992
- Multi-state memory1,008US 6,222,762 B1SanDisk Corporation · 2001
- High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates827US 5,867,429 ASanDisk Corporation · 1999
- Highly compact EPROM and flash EEPROM devices819US 5,095,344 A1992
- Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states791US 6,522,580 B2SanDisk Corporation · 2003