G11C 16/3404
Convergence or correction of memory cell threshold voltages
Official title: {Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells}
G11C16/3404 (Convergence or correction of memory cell threshold voltages) appears on 1,320 US grants and 1,233 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,320
- Published applications
- 1,233
- Assignees
- 200
- Inventors
- 1,786
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 7 | 0 |
| 1995 | 13 | 0 |
| 1996 | 15 | 0 |
| 1997 | 28 | 0 |
| 1998 | 19 | 0 |
| 1999 | 29 | 0 |
| 2000 | 14 | 0 |
| 2001 | 19 | 6 |
| 2002 | 37 | 23 |
| 2003 | 30 | 28 |
| 2004 | 26 | 25 |
| 2005 | 20 | 28 |
| 2006 | 21 | 35 |
| 2007 | 27 | 27 |
| 2008 | 32 | 39 |
| 2009 | 29 | 35 |
| 2010 | 32 | 41 |
| 2011 | 43 | 31 |
| 2012 | 37 | 49 |
| 2013 | 40 | 33 |
| 2014 | 55 | 54 |
| 2015 | 58 | 45 |
| 2016 | 47 | 22 |
| 2017 | 27 | 22 |
| 2018 | 19 | 19 |
| 2019 | 34 | 37 |
| 2020 | 45 | 62 |
| 2021 | 64 | 71 |
| 2022 | 108 | 151 |
| 2023 | 117 | 134 |
| 2024 | 108 | 91 |
| 2025 | 66 | 63 |
| 2026 | 50 | 62 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory device and method of operating the memory device29 Sep 2026US 12,749,538 B2SK hynix Inc.
- Voltage adjustment method, memory storage device, and memory control circuit unit29 Sep 2026US 12,749,543 B2Hefei Core Storage Electronic Limited
- Memory cell read threshold voltage optimization22 Sep 2026US 12,744,092 B2Micron Technology, Inc.
- Memory devices, memory systems, and control methods thereof to identify a programming failure15 Sep 2026US 12,738,334 B2Yangtze Memory Technologies Co., Ltd.
- Semiconductor memory device with reduced write voltage using channel floating and capacitive coupling8 Sep 2026US 12,731,645 B2Kioxia Corporation
- Bias voltage control for sub-block groups in a memory device8 Oct 2026US 2026/0311766 A1Micron Technology, Inc.
- Drift compensation for codewords in memory8 Oct 2026US 2026/0311767 A1Micron Technology, Inc.
- Resample start voltage for calibration in a program operation improvement8 Oct 2026US 2026/0311768 A1Micron Technology, Inc.
- Three-dimensional one time programmable memory1 Oct 2026US 2026/0301819 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Nand detect empty page scan1 Oct 2026US 2026/0301822 A1Micron Technology, Inc.
Most cited
By later US patents
- Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states791US 6,522,580 B2SanDisk Corporation · 2003
- Method for operating non-volatile memory device and memory controller354US 9,117,536 B2Samsung Electronics Co., Ltd. · 2015
- Multi-state nonvolatile memory capable of reducing effects of coupling between storage elements216US 6,807,095 B2Kabushiki Kaisha Toshiba · 2004
- Nonvolatile semiconductor memory device195US 8,374,033 B2Kabushiki Kaisha Toshiba · 2013
- Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller193US 5,602,789 AKabushiki Kaisha Toshiba · 1997