G11C 16/3413
Circuits or methods to recover overprogrammed nonvolatile memory cells detected during program
Official title: {Circuits or methods to recover overprogrammed nonvolatile memory cells detected during program verification, usually by means of a "soft" erasing step}
G11C16/3413 (Circuits or methods to recover overprogrammed nonvolatile memory cells detected during program) appears on 100 US grants and 75 published applications in this corpus.
Search patents in G11C- Granted patents
- 100
- Published applications
- 75
- Assignees
- 39
- Inventors
- 170
- Latest grant
- 13 May 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 4 | 0 |
| 1998 | 8 | 0 |
| 1999 | 5 | 0 |
| 2000 | 3 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 0 |
| 2003 | 1 | 1 |
| 2004 | 3 | 3 |
| 2005 | 0 | 1 |
| 2006 | 1 | 1 |
| 2007 | 1 | 3 |
| 2008 | 4 | 3 |
| 2009 | 2 | 4 |
| 2010 | 3 | 4 |
| 2011 | 4 | 5 |
| 2012 | 4 | 4 |
| 2013 | 6 | 2 |
| 2014 | 6 | 4 |
| 2015 | 6 | 3 |
| 2016 | 3 | 2 |
| 2017 | 2 | 4 |
| 2018 | 2 | 5 |
| 2019 | 7 | 6 |
| 2020 | 4 | 3 |
| 2021 | 3 | 5 |
| 2022 | 2 | 4 |
| 2023 | 4 | 1 |
| 2024 | 3 | 3 |
| 2025 | 1 | 1 |
| 2026 | 0 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Nonvolatile semiconductor memory device13 May 2025US 12,300,320 B2Kioxia Corporation
- Circuitry to compensate for data drift in analog neural memory in an artificial neural network6 Aug 2024US 12,056,601 B2Silicon Storage Technology, Inc.
- Verifying or reading a cell in an analog neural memory in a deep learning artificial neural network23 Jul 2024US 12,046,290 B2Silicon Storage Technology, Inc.
- Nonvolatile semiconductor memory device27 Feb 2024US 11,915,756 B2Kioxia Corporation
- Precise data tuning method and apparatus for analog neural memory in an artificial neural network19 Dec 2023US 11,847,556 B2Silicon Storage Technology, Inc.
- String zero/one full circle drain-side select gate over program countermeasure1 Oct 2026US 2026/0301829 A1SanDisk Technologies LLC
- Memory Circuit with Replica Column Multiplexer17 Sep 2026US 2026/0279470 A1
- Nonvolatile semiconductor memory device11 Jun 2026US 2026/0162722 A1Kioxia Corporation
- Memory device and method of operating the same29 May 2025US 2025/0174284 A1SK hynix Inc.
- Verifying Or Reading A Cell In An Analog Neural Memory In A Deep Learning Artificial Neural Network17 Oct 2024US 2024/0347111 A1Silicon Storage Techonology, Inc.
Most cited
By later US patents
- Nonvolatile semiconductor memory device195US 8,374,033 B2Kabushiki Kaisha Toshiba · 2013
- Electrically erasable and programmable non-volatile and multi-level memory systemn with write-verify controller193US 5,602,789 AKabushiki Kaisha Toshiba · 1997
- Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels167US 5,386,422 AKabushiki Kaisha Toshiba · 1995
- Method and structure for programming floating gate memory cells141US 5,272,669 ASunDisk Corporation · 1993
- Electrically erasable and programmable non-volatile memory system with write-verify controller using two reference levels138US 5,469,444 AKabushiki Kaisha Toshiba · 1995