Nonvolatile semiconductor memory device

A nonvolatile semiconductor memory device comprising:

• a memory unit;
• and
• a control unit,
• the memory unit including:
• a multilayer structure including a plurality of electrode films and a plurality of inter-electrode insulating films alternately stacked in a first direction;
• a first semiconductor pillar piercing the multilayer structure in the first direction;
• a first memory layer provided between the first semiconductor pillar and each of the electrode films;
• a first inner insulating film provided between the first memory layer and the first semiconductor pillar;
• a first outer insulating film provided between the first memory layer and each of the electrode films;
• and
• a first wiring electrically connected to one end of the first semiconductor pillar, and
• the control unit, in an operation of performing at least one of injection of a hole into the first memory layer and extraction of an electron from the first memory layer,
• performing a first operation of setting the first wiring at a first potential and setting the electrode films at a second potential lower than the first potential, and
• then performing a second operation of setting the first wiring at a third potential and setting the electrode films at a fourth potential higher than the third potential.