G11C 16/3409
Circuits or methods to recover overerased nonvolatile memory cells detected during erase
Official title: {Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step}
G11C16/3409 (Circuits or methods to recover overerased nonvolatile memory cells detected during erase) appears on 364 US grants and 226 published applications in this corpus.
Search patents in G11C- Granted patents
- 364
- Published applications
- 226
- Assignees
- 91
- Inventors
- 585
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 5 | 0 |
| 1995 | 11 | 0 |
| 1996 | 14 | 0 |
| 1997 | 25 | 0 |
| 1998 | 16 | 0 |
| 1999 | 25 | 0 |
| 2000 | 10 | 0 |
| 2001 | 17 | 6 |
| 2002 | 32 | 16 |
| 2003 | 18 | 19 |
| 2004 | 10 | 6 |
| 2005 | 11 | 12 |
| 2006 | 8 | 14 |
| 2007 | 10 | 10 |
| 2008 | 15 | 13 |
| 2009 | 7 | 9 |
| 2010 | 7 | 9 |
| 2011 | 9 | 7 |
| 2012 | 10 | 11 |
| 2013 | 7 | 4 |
| 2014 | 5 | 6 |
| 2015 | 10 | 9 |
| 2016 | 8 | 3 |
| 2017 | 3 | 5 |
| 2018 | 2 | 3 |
| 2019 | 6 | 9 |
| 2020 | 12 | 10 |
| 2021 | 6 | 10 |
| 2022 | 13 | 13 |
| 2023 | 14 | 8 |
| 2024 | 7 | 8 |
| 2025 | 4 | 2 |
| 2026 | 3 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory programming operation comprising preprogramming memory cells8 Sep 2026US 12,731,652 B2Macronix International Co., Ltd.
- Memory device with soft programmed dummy cells and method of operating the same19 May 2026US 12,633,347 B2SK hynix Inc.
- Multi-program of memory cells without intervening erase operations31 Mar 2026US 12,592,283 B2Micron Technology, Inc.
- Nonvolatile memory device and method of detecting defective memory cell block of nonvolatile memory device30 Dec 2025US 12,512,169 B2Samsung Electronics Co., Ltd.
- Method of determining and preprogramming over-erases groups of memory cells30 Dec 2025US 12,512,170 B2Samsung Electronics Co., Ltd.
- Erase operation for non-volatile memory cell2 Apr 2026US 2026/0094648 A1Silicon Storage Technology, Inc.
- Data storage device and operating method thereof19 Mar 2026US 2026/0080929 A1SK hynix Inc.
- Semiconductor memory device and method12 Mar 2026US 2026/0073993 A1
- Data storage device and operating method thereof12 Feb 2026US 2026/0045289 A1SK hynix Inc.
- Memory device and control method thereof23 Oct 2025US 2025/0329399 A1Winbond Electronics Corp.
Most cited
By later US patents
- Nonvolatile semiconductor memory device195US 8,374,033 B2Kabushiki Kaisha Toshiba · 2013
- Nonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cells178US 6,134,140 AKabushiki Kaisha Toshiba · 2000
- Memory architecture for a three volt flash EEPROM168US 5,477,499 AAdvanced Micro Devices, Inc. · 1995
- Flash EEPROM array with high endurance157US 5,335,198 AAdvanced Micro Devices, Inc. · 1994
- Method of repairing overerased cells in a flash memory149US 5,237,535 AIntel Corporation · 1993