Erase operation for non-volatile memory cell

A method for erasing a non-volatile memory cell, comprising:

• performing a pre-erase sequence comprising applying to a terminal of the non-volatile memory cell a first plurality of sequences of voltages, each sequence of voltages in the first plurality of sequence of voltages comprising voltages in a step pattern;
• and
• performing an erase sequence comprising applying to the terminal a second plurality of sequences of voltages, each sequence of voltages in the second plurality of sequences of voltages comprising voltages in a step pattern.

A method for erasing a non-volatile memory cell, comprising:

• applying to a terminal of the non-volatile memory cell a plurality of sequences of voltages, each sequence of voltages in the plurality of sequence of voltages comprising voltages in a step pattern, wherein a last step of each sequence increases in magnitude compared to the preceding sequence.

A controller for erasing a non-volatile memory cell, the controller configured to:

• perform a pre-erase sequence comprising applying voltages in a step pattern to a terminal of the non-volatile memory cell;
• and
• perform an erase sequence comprising applying a plurality pulses of increasing voltages to the terminal.

A controller for erasing a non-volatile memory cell, the controller configured to:

• perform a pre-erase sequence comprising applying to a terminal of the non-volatile memory cell a first plurality of sequences of voltages, each sequence of voltages in the first plurality of sequence of voltages comprising voltages in a step pattern;
• and
• perform an erase sequence comprising applying to the terminal a second plurality of sequences of voltages, each sequence of voltages in the second plurality of sequences of voltages comprising voltages in a step pattern.

A controller for erasing a non-volatile memory cell, the controller configured to:

• apply to a terminal of the non-volatile memory cell a plurality of sequences of voltages, each sequence of voltages in the plurality of sequence of voltages comprising voltages in a step pattern, wherein a last step increases in magnitude with each sequence of voltages in the plurality of sequences of voltages.