Memory device with soft programmed dummy cells and method of operating the same

A memory device, comprising:

• a memory block including strings, each including first memory cells coupled between a first dummy cell and a second dummy cell and second memory cells coupled between a third dummy cell and a fourth dummy cell, the third dummy cell being adjacent to the second dummy cell;
• and
• a peripheral circuit configured to:
• perform an erase operation on the memory block,
• after performing the erase operation on the memory block, perform a soft program operation on the fourth dummy cell, among the first to fourth dummy cells, which is farthest away from an area to which a precharge voltage is applied, and perform a normal program operation on the second memory cells, wherein the precharge voltage is applied to the area during the normal program operation, and wherein the area is adjacent to the first dummy cells, and
• after the normal program operation has been performed on the second memory cells, perform a soft program operation on the second and third dummy cells.