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AssigneeHefei Core Storage Electronic Limited
InventorsJian Hu, Wan-Jun Hong, Tsung-Lin Wu, Qi-Ao Zhu, Chong Peng
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Voltage adjustment method, which may be implemented by a memory storage device and a memory control circuit unit, includes: reading a first physical unit among the physical units based on a first read voltage to obtain a first count value, wherein the first count value reflects a total number of memory cells each having a threshold voltage lower than the first read voltage; obtaining a second count value based on a difference between the first count value and a first default value; bringing the second count value into a target formula to obtain a voltage adjustment parameter; adjusting the first read voltage to a second read voltage according to the voltage adjustment parameter; and reading the first physical unit based on the second read voltage.
A voltage adjustment method for a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units, and the voltage adjustment method comprises:
A memory storage device, comprising:
A memory control circuit unit for controlling a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical units, and the memory control circuit unit comprises:
Dependencies are inferred from the claim text.