Memory cell read threshold voltage optimization
AssigneeMicron Technology, Inc.
InventorsPatrick R. Khayat, Sivagnanam Parthasarathy, Mariano Burich
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AssigneeMicron Technology, Inc.
InventorsPatrick R. Khayat, Sivagnanam Parthasarathy, Mariano Burich
Estimating the term…
A method for determining an optimal read voltage for reading a set of memory cells is described. Read voltages having different amplitudes are provided to each of the memory cells. An output of each of the memory cells is read in response to each of the read voltages. An approximate amplitude of a threshold voltage of each of the memory cells is determined based on the outputs of the respective memory cells in response to the read voltages to generate codewords. Each of the codewords can be associated with a respective one of the read voltages. A decoding process is implemented on each of the codewords to determine a value of each of the codewords. The optimal read voltage is determined based on one of the codewords associated with a respective one or more of the read voltages having a lowest value of the syndrome weight.
A method for determining an optimal read voltage for reading a set of memory cells, the method comprising:
A system for determining an optimal read voltage for reading a set of memory cells of a memory device, comprising:
A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to determine an optimal read voltage for reading a set of memory cells, wherein determining the optimal read voltage comprising:
Dependencies are inferred from the claim text.