Method of controlling a semiconductor memory including memory cells and a word line
AssigneeKioxia Corporation
InventorsTsukasa Tokutomi, Masanobu Shirakawa
Life of this patent
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Abstract
According to one embodiment, a controller is configured to write four-bit data in each of memory cells, and read first data item from the memory cells through application of a first voltage to a word line. The controller is configured to read second data items by repeating a first operation of reading data including data of respective first bits of the memory cells through application of two voltages to the word line at different timings while changing the two voltages in each first operation from the two voltages in another first operation. The controller is configured to mask part of each of the second data items using the first data.
Claims17
A method of controlling a semiconductor memory including memory cells and a word line coupled to the memory cells, each of the memory cells being capable of storing four-bit data, the method comprising:
- reading a first data item from the memory cells through application of a first voltage to the word line;
- repeating a first operation to read first bit data in each of the memory cells, the first operation including applying a second voltage to the word line, and applying a third voltage to the word line, the third voltage having a magnitude different from that of the second voltage, the second voltage being changed within a first range every time the first operation is repeated, the third voltage being changed within a second range every time the first operation is repeated;
- reading a plurality of second data items by the repeating of the first operation;
- and
- masking part of each of the second data items using the first data item, wherein
- a number of repeating the first operation is greater than or equal to four.
Dependencies are inferred from the claim text.