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US 12,755,797 B2Granted
Enhanced read retry (ERR) for data recovery in flash memory
AssigneeSanDisk Technologies LLC
InventorsXuan Tian, Liang Li, Vincent Yin, Daniel J. Linnen
Life of this patent
Estimating the term…
Abstract
A flash memory includes an improved error handling algorithm for data recovery. Rather than running a default read recovery only, an Enhance Read Retry (ERR) process also is performed. After running a default read recovery, WLs are flagged with an error flag if the read was unsuccessful. The flag triggers ERR mode. ERR mode implements increase of the row read bias or implements increase of row read time or implements multiple pulses at the same voltage, or a combination of all three.
Claims11
A data storage device, comprising:
- a memory device;
- and
- a controller coupled to the memory device, wherein the controller is configured to:
- attempt to read a block of the memory device;
- and
- in response to determining that the read attempt of a first word line (WL) of the block failed, increase a voltage from a first level to a respective second level on two or more of:
- a select gate drain (SGD);
- one or more dummy WLs;
- one or more data WLs;
- and
- a select gate source (SGS);
- and
- make a subsequent attempt to read data from the first WL, wherein the controller is further configured to retire the block after attempting reading data from the first WL.
10 more elements
A data storage device, comprising:
- a memory device;
- and
- a controller coupled to the memory device, wherein the controller is configured to:
- attempt to read a block of the memory device;
- and
- in response to determining that the read attempt of a first word line (WL) of the block failed, increase a voltage from a first level to a respective second level on two or more of:
- a select gate drain (SGD);
- one or more dummy WLs;
- one or more data WLs;
- and
- a select gate source (SGS);
- and
- make a subsequent attempt to read data from the first WL, wherein the controller is further configured to determine that a new read attempt of the first word line (WL) of the block failed after increasing the voltage to the second level.
10 more elements
A data storage device, comprising:
- a memory device;
- and
- a controller coupled to the memory device, wherein the controller is configured to:
- read a block of the memory device;
- and
- in response to determining that a read attempt of a first word line (WL) of the block failed,
- trigger RC measurements for the first WL,
- increase a voltage on one or more of the WLs, and
- retry to read data from the first WL,
- wherein the triggering occurs after attempted reading all WLs of the block.
7 more elements
Dependencies are inferred from the claim text.