G11C 16/3472
Circuits or methods to verify correct erasure of nonvolatile memory cells whilst
Official title: {Circuits or methods to verify correct erasure of nonvolatile memory cells whilst erasing is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate erasure}
G11C16/3472 (Circuits or methods to verify correct erasure of nonvolatile memory cells whilst) appears on 109 US grants and 105 published applications in this corpus.
Search patents in G11C- Granted patents
- 109
- Published applications
- 105
- Assignees
- 42
- Inventors
- 191
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 3 | 0 |
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| 2000 | 0 | 0 |
| 2001 | 2 | 1 |
| 2002 | 4 | 7 |
| 2003 | 8 | 5 |
| 2004 | 4 | 4 |
| 2005 | 3 | 4 |
| 2006 | 2 | 8 |
| 2007 | 5 | 7 |
| 2008 | 8 | 1 |
| 2009 | 4 | 1 |
| 2010 | 1 | 0 |
| 2011 | 1 | 1 |
| 2012 | 0 | 0 |
| 2013 | 0 | 2 |
| 2014 | 2 | 3 |
| 2015 | 2 | 1 |
| 2016 | 2 | 2 |
| 2017 | 3 | 2 |
| 2018 | 4 | 3 |
| 2019 | 1 | 5 |
| 2020 | 7 | 10 |
| 2021 | 14 | 14 |
| 2022 | 6 | 8 |
| 2023 | 7 | 7 |
| 2024 | 5 | 2 |
| 2025 | 2 | 3 |
| 2026 | 2 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Flash memory and testing method thereof15 Sep 2026US 12,738,340 B2Winbond Electronics Corp.
- Memory device and control method thereof1 Sep 2026US 12,725,667 B2Winbond Electronics Corp.
- Erase operations in memory devices9 Dec 2025US 12,494,259 B2Yangtze Memory Technologies Co., Ltd.
- Assuring integrity and secure erasure of critical security parameters8 Apr 2025US 12,271,513 B2Micron Technology, Inc.
- Memory device and erasing and verification method thereof24 Sep 2024US 12,100,456 B2Yangtze Memory Technologies Co., Ltd.
- Non-volatile memory with smart tail detection read mode without erase time penalty2 Jul 2026US 2026/0188399 A1SanDisk Technologies LLC
- Flash memory apparatus and erasing method thereof4 Jun 2026US 2026/0155185 A1Winbond Electronics Corp.
- Flash memory apparatus and erasing method thereof2 Apr 2026US 2026/0094654 A1Winbond Electronics Corp.
- Erase operations in memory devices19 Mar 2026US 2026/0080958 A1Yangtze Memory Technologies Co., Ltd.
- Memory device and control method thereof23 Oct 2025US 2025/0329399 A1Winbond Electronics Corp.
Most cited
By later US patents
- Nonvolatile memory and semiconductor device with controlled voltage booster circuit236US 6,542,411 B2Hitachi, Ltd. · 2003
- Highly compact memory device with nonvolatile vertical transistor memory cell155US 5,739,567 A1998
- Multimedia storage system with highly compact memory device124US 5,386,132 A1995
- Systems for soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells95US 7,408,804 B2SanDisk Corporation · 2008
- Method for making multimedia storage system with highly compact memory cells68US 5,616,510 A1997