G11C 16/3481
Circuits or methods to verify correct programming of nonvolatile memory cells whilst
Official title: {Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming}
G11C16/3481 (Circuits or methods to verify correct programming of nonvolatile memory cells whilst) appears on 241 US grants and 211 published applications in this corpus.
Search patents in G11C- Granted patents
- 241
- Published applications
- 211
- Assignees
- 66
- Inventors
- 336
- Latest grant
- 11 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 8 | 0 |
| 1999 | 9 | 0 |
| 2000 | 7 | 0 |
| 2001 | 5 | 2 |
| 2002 | 4 | 9 |
| 2003 | 10 | 11 |
| 2004 | 13 | 13 |
| 2005 | 5 | 9 |
| 2006 | 12 | 10 |
| 2007 | 8 | 12 |
| 2008 | 10 | 11 |
| 2009 | 8 | 9 |
| 2010 | 6 | 6 |
| 2011 | 9 | 6 |
| 2012 | 6 | 5 |
| 2013 | 7 | 9 |
| 2014 | 6 | 7 |
| 2015 | 5 | 3 |
| 2016 | 10 | 9 |
| 2017 | 11 | 14 |
| 2018 | 12 | 5 |
| 2019 | 6 | 8 |
| 2020 | 7 | 9 |
| 2021 | 14 | 15 |
| 2022 | 10 | 8 |
| 2023 | 9 | 13 |
| 2024 | 6 | 4 |
| 2025 | 8 | 4 |
By publication year. Applications have been published since 2001.
Recent patents
- Fast bit erase for upper tail tightening of threshold voltage distributions11 Nov 2025US 12,469,565 B2Micron Technology, Inc.
- Open block detection using current consumption peak during fourth time period of read operation and method of lowering current consumption for non-volatile memory apparatus11 Nov 2025US 12,469,567 B2SanDisk Technologies LLC
- Method and apparatus with flash memory control29 Jul 2025US 12,374,409 B2Samsung Electronics Co., Ltd.
- Partial block handling in a non-volatile memory device25 Mar 2025US 12,260,916 B2Micron Technology, Inc.
- Memory device and compensation method of data retention thereof18 Mar 2025US 12,254,934 B2Macronix International Co., Ltd.
- Program time improvement for nand die with coarse bitscan during program-verify25 Dec 2025US 2025/0391484 A1SanDisk Technologies LLC
- Method and apparatus with flash memory control23 Oct 2025US 2025/0329395 A1Samsung Electronics Co., Ltd.
- Open block detection using current consumption peak during fourth time period of read operation and method of lowering current consumption for non-volatile memory apparatus26 Jun 2025US 2025/0210113 A1Western Digital Technologies, Inc.
- Memory device, operation method of memory device, and page buffer included in memory device27 Mar 2025US 2025/0104748 A1Samsung Electronics Co., Ltd.
- Nonvolatile memory device and operation method thereof3 Oct 2024US 2024/0331785 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell325US 6,643,188 B2Kabushiki Kaisha Toshiba · 2003
- Nonvolatile memory and semiconductor device with controlled voltage booster circuit236US 6,542,411 B2Hitachi, Ltd. · 2003
- Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells221US 5,712,815 AAdvanced Micro Devices, Inc. · 1998
- Highly compact memory device with nonvolatile vertical transistor memory cell155US 5,739,567 A1998
- Method and circuit for simultaneously programming and verifying the programming of selected EEPROM cells151US 5,422,842 ASunDisk Corporation · 1995