Method and apparatus with flash memory control

A memory device comprising:

• a cell array comprising a plurality of memory cells;
• and
• a controller configured to perform iterations of first programming on a target memory cell of the cell array until a primary target of the first programming is determined to be satisfied, wherein each iteration of the first programming includes applying a programming voltage to the target memory cell for a first programming time and determining whether a corresponding current of the target cell satisfies a primary target, wherein first of the iterations adjust only the first programming time until the programming time reaches a threshold value, and wherein second of the iterations adjust only the programming voltage after the programming time reaches the threshold value, wherein
• when the cell current of the target memory cell is determined to satisfy the primary target of the first programming, the controller performs second programming on the target memory cell by iteratively adjusting second programming time, and
• when the cell current of the target memory cell is determined to satisfy a secondary target in association with the second programming, terminate programming on the target memory cell.

A memory device comprising:

• memory storing instructions;
• a flash memory comprising a plurality of memory cells;
• a processor configured by the instructions to perform iterations of first programming on a target memory cell of the flash memory until a primary target of the first programming is determined to be satisfied, wherein each iteration of the first programming includes applying a programming voltage to the target memory cell for a first programming time and determining whether a corresponding current of the target cell satisfies a primary target, wherein first of the iterations adjust only the first programming time until the programming time reaches a threshold value, and wherein second of the iterations adjust only the programming voltage after the programming time reaches the threshold value,
• when the cell current of the target memory cell is determined to satisfy the primary target of the first programming, perform second programming on the target memory cell by iteratively adjusting a second programming time, and
• when the cell current of the target memory cell is determined to satisfy a secondary target after the second programming, terminate programming on the target memory cell.

A method comprising:

• repeatedly adjusting a programming voltage of a memory cell of a flash memory device until it is determined that a cell current of the memory cell has reached a first threshold;
• and
• based on determining that the cell current has reached the first threshold, repeatedly adjusting a programming time of the memory cell until it is determined that the cell current of the memory cell has reached a second threshold,
• wherein the repeatedly adjusting the programming voltage further comprises adjusting the programming time of the programming voltage, and
• wherein the programming time is adjusted with greater granularity before determining that the cell current has reached the first threshold than when adjusted after determining that the cell current has reached the first threshold.