Open block detection using current consumption peak during fourth time period of read operation and method of lowering current consumption for non-volatile memory apparatus

A controller in communication with a memory apparatus including memory cells configured to retain a threshold voltage corresponding to data states and disposed in memory holes coupled to bit lines and grouped into blocks, the controller configured to:

• instruct the memory apparatus to determine an amount of the memory cells of one of the blocks that are programmed based on an electrical current consumed by the memory apparatus during a fourth period of time of a read operation in which selected ones of the bit lines are ramped up to a bit line voltage;
• adjust at least one read parameter based on the amount of the memory cells of the one of the blocks that are programmed;
• and
• instruct the memory apparatus to utilize the adjusted at least one read parameter while reading the memory cells to determine if the memory cells have the threshold voltage above one or more of read levels associated with each of the data states in the read operation.

A method of operating a memory apparatus including memory cells configured to retain a threshold voltage corresponding to data states and disposed in memory holes coupled to bit lines and grouped into blocks, the method comprising the steps of:

• determining an amount of the memory cells of one of the blocks that are programmed based on an electrical current consumed by the memory apparatus during a fourth period of time of a read operation in which selected ones of the bit lines are ramped up to a bit line voltage;
• adjusting at least one read parameter based on the amount of the memory cells of the one of the blocks that are programmed;
• and
• utilizing the adjusted at least one read parameter while reading the memory cells to determine if the memory cells have the threshold voltage above one or more read levels associated with each of the data states in the read operation.