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US 12,254,934 B2Granted
Memory device and compensation method of data retention thereof
AssigneeMacronix International Co., Ltd.
InventorsChih-Wei Hu, Chih-Chang Hsieh
Life of this patent
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Abstract
A memory device, such as a 3D AND type flash memory, and a compensation method of data retention thereof are provided. The compensation method includes the following. A reading operation is performed on each of a plurality of programmed memory cells of the memory device. Whether a charge loss phenomenon occurs in the programmed memory cells is determined through the reading operation to set the programmed memory cells to be charge loss memory cells. A refill program operation is performed on the charge loss memory cells.
Claims16
A compensation method of data retention, comprising:
- setting a first threshold voltage and a second threshold voltage, where the second threshold voltage is greater than the first threshold voltage;
- performing a reading operation on each of a plurality of programmed memory cells in a memory device, and determining whether a threshold voltage of each of the programmed memory cells falls within a range of the first threshold voltage to the second threshold voltage;
- determining whether a charge loss phenomenon occurs in the programmed memory cells through the reading operation;
- setting the programmed memory cells to be the charge loss memory cells when the threshold voltage of each of the programmed memory cells falls within the range of the first threshold voltage to the second threshold voltage;
- and
- performing a refill program operation on the charge loss memory cells.
3 more elements
A memory device comprising:
- a memory block;
- and
- a controller coupled with the memory block, and being configured to:
- set a first threshold voltage and a second threshold voltage, where the second threshold voltage is greater than the first threshold voltage;
- perform a reading operation on each of a plurality of programmed memory cells in the memory device;
- determine whether a charge loss phenomenon occurs in the programmed memory cells through the reading operation to set the programmed memory cells to be charge loss memory cells by determining whether a threshold voltage of each of the programmed memory cells falls within a range of the first threshold voltage to the second threshold voltage or not
- set the programmed memory cells to be the charge loss memory cells when the threshold voltage of each of the programmed memory cells falls within the range of the first threshold voltage to the second threshold voltage;
- and
- perform a refill program operation on the charge loss memory cells.
6 more elements
A compensation method of data retention, comprising:
- setting a first threshold voltage, a second threshold voltage, and a third threshold voltage, where the third threshold voltage is greater than the second threshold voltage, and the second threshold voltage is greater than the first threshold voltage
- performing a first reading operation on each of the programmed memory cells according to the second threshold voltage based on an error checking and correction mechanism;
- performing a second reading operation on each of the programmed memory cells according to the first threshold voltage and the third threshold voltage when the first reading operation fails;
- and
- setting the programmed memory cells having a threshold voltage within a range of the first threshold voltage to the third threshold voltage to be the charge loss memory cells;
- and
- performing a refill program operation on the charge loss memory cells.
4 more elements
A compensation method of data retention, comprising:
- setting a first threshold voltage, a second threshold voltage, and a third threshold voltage, where the third threshold voltage is greater than the second threshold voltage, and the second threshold voltage is greater than the first threshold voltage;
- performing a first reading operation on the memory cells according to the first threshold voltage and the second threshold voltage;
- performing a second reading operation on the memory cells according to the third threshold voltage when the first reading operation fails;
- setting the programmed memory cells having a threshold voltage within a range of the first threshold voltage to the third threshold voltage to be the charge loss memory cells;
- and
- performing a refill program operation on the charge loss memory cells.
3 more elements
A memory device comprising:
- a memory block;
- and
- a controller coupled with the memory block, and being configured to:
- set a first threshold voltage, a second threshold voltage, and a third threshold voltage, where the third threshold voltage is greater than the second threshold voltage, and the second threshold voltage is greater than the first threshold voltage
- perform a first reading operation on each of the programmed memory cells according to the second threshold voltage based on an error checking and correction mechanism;
- perform a second reading operation on each of the programmed memory cells according to the first threshold voltage and the third threshold voltage when the first reading operation fails;
- and
- set the programmed memory cells having a threshold voltage within a range of the first threshold voltage to the third threshold voltage to be the charge loss memory cells;
- and
- perform a refill program operation on the charge loss memory cells.
7 more elements
A memory device comprising:
- a memory block;
- and
- a controller coupled with the memory block, and being configured to:
- set a first threshold voltage, a second threshold voltage, and a third threshold voltage, where the third threshold voltage is greater than the second threshold voltage, and the second threshold voltage is greater than the first threshold voltage;
- perform a first reading operation on the memory cells according to the first threshold voltage and the second threshold voltage;
- perform a second reading operation on the memory cells according to the third threshold voltage when the first reading operation fails;
- set the programmed memory cells having a threshold voltage within a range of the first threshold voltage to the third threshold voltage to be the charge loss memory cells;
- and
- perform a refill program operation on the charge loss memory cells.
6 more elements
Dependencies are inferred from the claim text.