G11C 16/3486
Circuits or methods to prevent overprogramming of nonvolatile memory cells
Official title: {Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming}
G11C16/3486 (Circuits or methods to prevent overprogramming of nonvolatile memory cells) appears on 146 US grants and 100 published applications in this corpus.
Search patents in G11C- Granted patents
- 146
- Published applications
- 100
- Assignees
- 59
- Inventors
- 252
- Latest grant
- 2 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 7 | 0 |
| 1997 | 6 | 0 |
| 1998 | 9 | 0 |
| 1999 | 7 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 1 |
| 2002 | 3 | 0 |
| 2003 | 3 | 2 |
| 2004 | 0 | 4 |
| 2005 | 5 | 2 |
| 2006 | 3 | 5 |
| 2007 | 5 | 3 |
| 2008 | 3 | 8 |
| 2009 | 2 | 3 |
| 2010 | 7 | 9 |
| 2011 | 6 | 3 |
| 2012 | 8 | 6 |
| 2013 | 5 | 0 |
| 2014 | 2 | 5 |
| 2015 | 5 | 2 |
| 2016 | 8 | 6 |
| 2017 | 3 | 1 |
| 2018 | 1 | 2 |
| 2019 | 2 | 6 |
| 2020 | 9 | 9 |
| 2021 | 7 | 10 |
| 2022 | 6 | 5 |
| 2023 | 6 | 1 |
| 2024 | 3 | 2 |
| 2025 | 3 | 2 |
| 2026 | 0 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory system2 Dec 2025US 12,488,840 B2Kioxia Corporation
- Method for programming a memory device to reduce retention error4 Nov 2025US 12,462,886 B2Yangtze Memory Technologies Co., Ltd.
- Simultaneous lower tail verify with upper tail verify22 Jul 2025US 12,367,940 B2SanDisk Technologies LLC
- Circuitry to compensate for data drift in analog neural memory in an artificial neural network6 Aug 2024US 12,056,601 B2Silicon Storage Technology, Inc.
- Method for programming memory device to reduce retention error9 Jul 2024US 12,033,708 B2Yangtze Memory Technologies Co., Ltd.
- Program refresh for non-volatile memory cells30 Apr 2026US 2026/0120779 A1Silicon Storage Technology, Inc.
- Memory system26 Feb 2026US 2026/0057945 A1Kioxia Corporation
- Method for programming a memory system29 Jan 2026US 2026/0031166 A1Yangtze Memory Technologies Co., Ltd.
- Wear leveling in solid state drives15 May 2025US 2025/0156082 A1Micron Technology, Inc.
- Simultaneous lower tail verify with upper tail verify6 Feb 2025US 2025/0046388 A1Western Digital Technologies, Inc.
Most cited
By later US patents
- Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state625US 5,774,397 AKabushiki Kaisha Toshiba · 1998
- Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells221US 5,712,815 AAdvanced Micro Devices, Inc. · 1998
- Method and circuit for simultaneously programming and verifying the programming of selected EEPROM cells151US 5,422,842 ASunDisk Corporation · 1995
- Faster programming of higher level states in multi-level cell flash memory143US 7,173,859 B2SanDisk Corporation · 2007
- Non-volatile semiconductor memory device141US 5,555,204 AKabushiki Kaisha Toshiba · 1996