G11C 16/3445
Circuits or methods to verify correct erasure of nonvolatile memory cells
Official title: {Circuits or methods to verify correct erasure of nonvolatile memory cells}
G11C16/3445 (Circuits or methods to verify correct erasure of nonvolatile memory cells) appears on 1,274 US grants and 1,106 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,274
- Published applications
- 1,106
- Assignees
- 169
- Inventors
- 1,515
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 6 | 0 |
| 1995 | 14 | 0 |
| 1996 | 22 | 0 |
| 1997 | 30 | 0 |
| 1998 | 22 | 0 |
| 1999 | 36 | 0 |
| 2000 | 28 | 0 |
| 2001 | 32 | 8 |
| 2002 | 38 | 31 |
| 2003 | 31 | 39 |
| 2004 | 18 | 24 |
| 2005 | 31 | 26 |
| 2006 | 27 | 39 |
| 2007 | 34 | 41 |
| 2008 | 39 | 27 |
| 2009 | 30 | 22 |
| 2010 | 17 | 12 |
| 2011 | 25 | 31 |
| 2012 | 25 | 25 |
| 2013 | 26 | 27 |
| 2014 | 27 | 48 |
| 2015 | 50 | 50 |
| 2016 | 79 | 69 |
| 2017 | 66 | 50 |
| 2018 | 52 | 48 |
| 2019 | 59 | 74 |
| 2020 | 74 | 72 |
| 2021 | 73 | 55 |
| 2022 | 59 | 68 |
| 2023 | 61 | 71 |
| 2024 | 55 | 61 |
| 2025 | 48 | 48 |
| 2026 | 33 | 40 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Architecture and method for NAND memory operation6 Oct 2026US 12,755,794 B2Yangtze Memory Technologies Co., Ltd.
- Semiconductor memory device and operating method thereof29 Sep 2026US 12,749,545 B2SK hynix Inc.
- Operations on partially programmed erase blocks15 Sep 2026US 12,738,327 B2Micron Technology, Inc.
- Partial block erase operations in memory devices1 Sep 2026US 12,725,662 B2Micron Technology, Inc.
- Word line bias during stripe erase in a memory device25 Aug 2026US 12,718,886 B2SanDisk Technologies LLC
- Alternative erase schemes for reliability-risk word lines8 Oct 2026US 2026/0311777 A1Micron Technology, Inc.
- Memory device, operating method thereof, and memory system24 Sep 2026US 2026/0290420 A1Yangtze Memory Technologies Co., Ltd.
- Memory system17 Sep 2026US 2026/0279472 A1Kioxia Corporation
- Efficient empty page scan operations17 Sep 2026US 2026/0279473 A1Micron Technology, Inc.
- Non-volatile memory with dynamic source voltage17 Sep 2026US 2026/0279476 A1SanDisk Technologies LLC
Most cited
By later US patents
- Multi-state EEprom read and write circuits and techniques1,175US 5,172,338 ASunDisk Corporation · 1992
- Nonvolatile memory device, operating method thereof and memory system including the same633US 8,559,235 B2Samsung Electronics Co., Ltd. · 2013
- Non-volatile semiconductor memory device and method of programming a non-volatile memory cell to a predetermined state625US 5,774,397 AKabushiki Kaisha Toshiba · 1998
- Flash eeprom system602US 5,297,148 ASunDisk Corporation · 1994
- Flash EEprom system524US 5,602,987 ASanDisk Corporation · 1997