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US 12,749,545 B2Granted
Semiconductor memory device and operating method thereof
AssigneeSK hynix Inc.
InventorHyung Jin Choi
Life of this patent
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Abstract
A semiconductor memory device includes a memory cell array circuit and a driving force adjustment circuit. The memory cell array circuit includes a plurality of memory cells. The driving force adjustment circuit adjusts driving forces of a plurality of respective verify pass voltages based on whether or not the plurality of memory cells are programmed.
Claims16
A semiconductor memory device comprising:
- a plurality of memory cells;
- and
- a driving force adjustment circuit configured to adjust, based on at least one of a number of memory cells in a programmed state among the plurality of memory cells and a number of memory cells in an erased state among the plurality of memory cells, time for at least one verify pass voltage to reach a corresponding target voltage level and configured to apply the at least one verify pass voltage to at least one memory cell among the plurality of memory cells.
A semiconductor memory device comprising:
- a plurality of memory cells;
- and
- a driving force adjustment circuit configured to adjust, based on a location of a target memory cell among the plurality of memory cells and a program direction, time for at least one verify pass voltage to reach a corresponding target voltage level and configured to apply the at least one verify pass voltage to at least one memory cell other than the target memory cell among the plurality of memory cells.
A driving force adjustment circuit of a semiconductor memory device comprising:
- a verify control circuit configured to generate selection voltage information and selection word line information based on at least one of a number of memory cells in a programmed state and a number of memory cells in an erased state;
- a voltage generation circuit configured to set a driving force of at least one verify pass voltage based on the selection voltage information;
- and
- a word line driving circuit configured to drive at least one word line using the at least one verify pass voltage based on the selection word line information,
- wherein the at least one verify pass voltage reaches a corresponding target voltage level more quickly as the driving force increases.
2 more elements
Dependencies are inferred from the claim text.