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US 2026/0279476 A1Published application
Non-volatile memory with dynamic source voltage
AssigneeSanDisk Technologies LLC
InventorsWei CAO, Sisi YANG, Xiang YANG
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Abstract
A non-volatile storage apparatus and method to increase a number of erase-program cycles before bits in non-volatile memory cells become unerasable is provided. The apparatus and method include tracking an erase metric that indicates when the non-volatile memory cells are likely to become unerasable or are unerasable and shifting a source voltage during erase verify to cause a voltage level for which the memory cells are indicated as erased higher such that memory cells that be found unusable without the source voltage shift are usable.
Claims20
A non-volatile memory apparatus, comprising:
- non-volatile memory comprising non-volatile memory cells;
- and
- a control circuit connected to the non-volatile memory, the control circuit is configured to:
- track an erase metric for the non-volatile memory cells;
- and
- for the erase metric beyond a threshold, shift a source voltage by a predetermined increment and perform an erase operation with the shifted source voltage.
3 more elements
A method, comprising:
- shifting, by a predetermined increment, a source voltage for erase verify based on an erase metric being met for non-volatile memory cells;
- shifting, by the predetermined increment, a source voltage for program verify,
- wherein the erase-metric is based on a threshold voltage distribution for erased memory cells;
- performing an erase verify with the shifted source voltage for erase verify;
- and
- performing a program verify with the shifted source voltage for program verify.
3 more elements
Dependencies are inferred from the claim text.