G11C 11/56
Digital stores characterised by the use of particular electric or magnetic storage
Official title: using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
G11C11/56 (Digital stores characterised by the use of particular electric or magnetic storage) appears on 14,348 US grants and 13,949 published applications in this corpus.
Search patents in G11C- Granted patents
- 14,348
- Published applications
- 13,949
- Assignees
- 1,026
- Inventors
- 10,031
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 4 | 0 |
| 1978 | 4 | 0 |
| 1979 | 4 | 0 |
| 1980 | 6 | 0 |
| 1981 | 6 | 0 |
| 1982 | 7 | 0 |
| 1983 | 10 | 0 |
| 1984 | 10 | 0 |
| 1985 | 11 | 0 |
| 1986 | 10 | 0 |
| 1987 | 10 | 0 |
| 1988 | 6 | 0 |
| 1989 | 11 | 0 |
| 1990 | 10 | 0 |
| 1991 | 11 | 0 |
| 1992 | 21 | 0 |
| 1993 | 19 | 0 |
| 1994 | 33 | 0 |
| 1995 | 48 | 0 |
| 1996 | 71 | 0 |
| 1997 | 80 | 0 |
| 1998 | 169 | 0 |
| 1999 | 178 | 0 |
| 2000 | 196 | 0 |
| 2001 | 267 | 57 |
| 2002 | 210 | 179 |
| 2003 | 193 | 230 |
| 2004 | 219 | 349 |
| 2005 | 230 | 372 |
| 2006 | 294 | 333 |
| 2007 | 301 | 451 |
| 2008 | 400 | 668 |
| 2009 | 492 | 651 |
| 2010 | 515 | 598 |
| 2011 | 635 | 553 |
| 2012 | 588 | 544 |
| 2013 | 567 | 594 |
| 2014 | 675 | 632 |
| 2015 | 727 | 603 |
| 2016 | 733 | 595 |
| 2017 | 656 | 451 |
| 2018 | 519 | 537 |
| 2019 | 629 | 742 |
| 2020 | 776 | 794 |
| 2021 | 798 | 762 |
| 2022 | 698 | 803 |
| 2023 | 696 | 726 |
| 2024 | 713 | 716 |
| 2025 | 580 | 558 |
| 2026 | 298 | 451 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 11/5621Using charge storage in a floating gate9,504
- G11C 11/5671Using charge trapping in an insulator1,417
- G11C 11/5678Using amorphous/crystalline phase transition storage elements1,305
- G11C 11/5607Using magnetic storage elements684
- G11C 11/5685Using storage elements comprising metal oxide memory material619
- G11C 11/565Using capacitive charge storage elements426
- G11C 11/5657Using ferroelectric storage elements384
- G11C 11/5692Read-only digital stores using storage elements with more than two stable states314
Recent patents
- Enhanced read retry (ERR) for data recovery in flash memory6 Oct 2026US 12,755,797 B2SanDisk Technologies LLC
- Method of controlling a semiconductor memory including memory cells and a word line6 Oct 2026US 12,755,800 B2Kioxia Corporation
- Binary neural network hardware apparatus22 Sep 2026US 12,744,081 B2Electronics and Telecommunications Research Institute
- Memory devices including tri-state memory cells22 Sep 2026US 12,744,082 B2Micron Technology, Inc.
- Method for reading a multi-level non-volatile memory device, in particular a phase-change memory device, and multi-level non-volatile memory device22 Sep 2026US 12,744,084 B2STMicroelectronics International N. V.
- Ferroelectric storage apparatus and method of reading information8 Oct 2026US 2026/0311721 A1Resonac Hard Disk Corporation
- Optimization of soft bit windows based on signal and noise characteristics of memory cells8 Oct 2026US 2026/0311755 A1Micron Technology, Inc.
- Bias voltage control for sub-block groups in a memory device8 Oct 2026US 2026/0311766 A1Micron Technology, Inc.
- Alternative erase schemes for reliability-risk word lines8 Oct 2026US 2026/0311777 A1Micron Technology, Inc.
- Selective use of a word line monitoring procedure for reliability-risk word lines8 Oct 2026US 2026/0311782 A1Micron Technology, Inc.
Most cited
By later US patents
- Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping1,211US 6,011,725 ASaifun Semiconductors Ltd. · 2000
- Multi-state EEprom read and write circuits and techniques1,175US 5,172,338 ASunDisk Corporation · 1992
- Vertically stacked field programmable nonvolatile memory and method of fabrication1,159US 6,034,882 AMatrix Semiconductor, Inc. · 2000
- Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping1,069US 5,768,192 ASaifun Semiconductors Ltd. · 1998
- Multi-state memory1,008US 6,222,762 B1SanDisk Corporation · 2001