G11C 11/5671
Using charge trapping in an insulator
Official title: {using charge trapping in an insulator}
G11C11/5671 (Using charge trapping in an insulator) appears on 1,417 US grants and 1,407 published applications in this corpus.
Search patents in G11C- Granted patents
- 1,417
- Published applications
- 1,407
- Assignees
- 142
- Inventors
- 1,670
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 11 | 0 |
| 2001 | 27 | 5 |
| 2002 | 26 | 17 |
| 2003 | 23 | 25 |
| 2004 | 19 | 13 |
| 2005 | 11 | 14 |
| 2006 | 19 | 29 |
| 2007 | 17 | 26 |
| 2008 | 23 | 27 |
| 2009 | 30 | 33 |
| 2010 | 22 | 18 |
| 2011 | 23 | 11 |
| 2012 | 19 | 11 |
| 2013 | 13 | 19 |
| 2014 | 19 | 14 |
| 2015 | 30 | 38 |
| 2016 | 51 | 37 |
| 2017 | 29 | 14 |
| 2018 | 16 | 36 |
| 2019 | 82 | 159 |
| 2020 | 167 | 185 |
| 2021 | 170 | 163 |
| 2022 | 173 | 202 |
| 2023 | 159 | 141 |
| 2024 | 135 | 87 |
| 2025 | 68 | 41 |
| 2026 | 29 | 42 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Nonvolatile memory15 Sep 2026US 12,738,316 B2Kioxia Corporation
- Synaptic element for performing polynomial operation and electronic circuit including the same15 Sep 2026US 12,740,101 B2Electronics and Telecommunications Research Institute
- Memory systems and methods of controlling the same, and readable storage media1 Sep 2026US 12,725,661 B2Yangtze Memory Technologies Co., Ltd.
- Memory system25 Aug 2026US 12,717,677 B2Kioxia Corporation
- Dynamic read disturb management algorithm for flash-based memory25 Aug 2026US 12,717,712 B2Micron Technology, Inc.
- Extending the stop fine mode for improving performance and power by reducing verify and scan operations24 Sep 2026US 2026/0290448 A1SanDisk Technologies LLC
- Semiconductor memory device to hold 5-bits of data per memory cell24 Sep 2026US 2026/0290449 A1Kioxia Corporation
- Non-volatile memory and programming method thereof3 Sep 2026US 2026/0260688 A1Macronix International Co., Ltd.
- Capacitive synaptic device13 Aug 2026US 2026/0239634 A1Semron GmbH
- Multi-pass programming techniques for memory devices6 Aug 2026US 2026/0229300 A1SanDisk Technologies LLC
Most cited
By later US patents
- Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping1,211US 6,011,725 ASaifun Semiconductors Ltd. · 2000
- Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping1,069US 5,768,192 ASaifun Semiconductors Ltd. · 1998
- Nonvolatile semiconductor memory device capable of uniformly inputting/outputting data419US 7,173,857 B2Renesas Technology Corp. · 2007
- Multigate semiconductor device with vertical channel current and method of fabrication396US 6,580,124 B1Matrix Semiconductor, Inc. · 2003
- Method of controlling multi-state NROM314US 6,320,786 B1Macronix International Co., Ltd. · 2001