US 12,725,661 B2 · Memory systems and methods of controlling the same, and readable storage media

Abstract

An example memory system includes a memory device and a memory controller. The memory device includes memory cells each configured to be in one of data states. The memory controller is configured to: perform a read operation using a test read voltage corresponding to a selected data state among the data states; acquire a count of memory cells each having a threshold voltage that satisfies a preset condition including: the threshold voltage being less than or equal to the test read voltage, or the threshold voltage being greater than or equal to the test read voltage; determine a difference between the count and an expected count; and acquire at least one read retry voltage according to the difference, a mapping relationship, and a read retry table, wherein the mapping relationship includes a correspondence between an expected voltage offset value and the difference.

Claims20

Dependent claims

A memory system, comprising:

a memory device comprising a plurality of memory cells, wherein each of the plurality of memory cells is configured to be in one of a plurality of data states;
and
a memory controller coupled with the memory device and configured to:
perform a read operation using a test read voltage corresponding to a selected data state among the plurality of data states;
acquire a count of memory cells each having a threshold voltage that satisfies a preset condition, wherein the preset condition comprises:
the threshold voltage being less than or equal to the test read voltage, or the threshold voltage being greater than or equal to the test read voltage;
determine a difference between the count and an expected count;
and
acquire at least one read retry voltage according to the difference, a mapping relationship, and a read retry table, wherein the mapping relationship comprises a correspondence between an expected voltage offset value and the difference.

6 more elements

A control method of a memory system, comprising:

performing a read operation on a plurality of memory cells using a test read voltage corresponding to a selected data state among a plurality of data states, wherein each of the plurality of memory cells is configured to be in one of the plurality of data states;
acquiring a count of memory cells each having a threshold voltage that satisfies a preset condition, wherein the preset condition comprises:
the threshold voltage being less than or equal to the test read voltage, or the threshold voltage being greater than or equal to the test read voltage;
determining a difference between the count and an expected count;
and
acquiring at least one read retry voltage according to the difference, a mapping relationship, and a read retry table, wherein the mapping relationship comprises a correspondence between an expected voltage offset value and the difference.

3 more elements

Dependencies are inferred from the claim text.

Memory systems and methods of controlling the same, and readable storage media

Life of this patent

Memory systems and methods of controlling the same, and readable storage media

Life of this patent

Abstract

Claims20