Nonvolatile memory

A method of controlling a first set of memory cells, each of the first set of memory cells having a gate connected to a word line;

• and each of the first set of memory cells being configured to store data in a non-volatile manner corresponding to a threshold voltage thereof, the first set of memory cells including a second set of memory cells and a third set of memory cells different from the second set of memory cells, the method comprising:
• receiving first write data of P bits per memory cell where P is an integer of one or more;
• receiving, after the first write data, second write data of Q bits per memory cell where Q is an integer of one or more;
• and
• executing a first programming operation in response to a receipt of the first write data and executing a second programming operation in response to a receipt of the second write data,
• the first programming operation including
• acquiring first temperature information, and
• by applying a programming voltage to the word line,
• setting the threshold voltage of each of the second set of memory cells in a second section corresponding to the first write data among 2P first sections, and
• setting the threshold voltage of each of the third set of memory cells in a third section corresponding to the first temperature information, among the 2P first sections, and
• the second programming operation including
• acquiring second temperature information,
• reading the first write data and the first temperature information from the first set of memory cells, and
• by applying a programming voltage to the word line,
• setting the threshold voltage of each of the second set of memory cells in a fifth section among 2(P+Q) fourth sections, the second section corresponding to a combination of the first write data and the second write data, and
• setting the threshold voltage of each of the third set of memory cells in a sixth section among the 2(P+Q) fourth sections, the second section corresponding to a combination of the first temperature information and the second temperature information.

A method of controlling a first set of memory cells, each of the first set of memory cells having a gate connected to a word line and each of is the first set of memory cells being configured to store data in a non-volatile manner corresponding to a threshold voltage thereof, the first set of memory cells including a second set of memory cells, a third set of memory cells different from the second set of memory cells, and a fourth set of memory cells different from the second set of memory cells and the third set of memory cells, the method comprising:

• receiving write data;
• and
• executing a first programing operation and executing a second programming operation after the first programming operation,
• the first programming operation including
• acquiring first temperature information, and
• by applying a programming voltage to the word line,
• setting the threshold voltage of each of the second set of memory cells in a second section corresponding to the write data among a plurality of first sections,
• setting the threshold voltage of each of the third set of memory cells in a third section among the plurality of first sections, the third section corresponding to the first temperature information, and
• setting the threshold voltage of each of the fourth set of memory cells in a fourth section among the plurality of first sections, the fourth section corresponding to the first temperature information, and
• the second programming operation including
• acquiring second temperature information,
• by applying a programming voltage to the word line,
• setting the threshold voltage of each of the second set of memory cells in a sixth section corresponding to the write data among a plurality of fifth sections, a total voltage range of the plurality of fifth sections being wider in voltage range than a total voltage range of the plurality of first sections, and
• setting the threshold voltage of each of the fourth set of memory cells in a seventh section or an eighth section in accordance with the second temperature information among the plurality of fifth sections, the seventh section including a same voltage range as the fourth section, the eighth section being higher in voltage range than the fourth section.