G11C 11/5607
Using magnetic storage elements
Official title: {using magnetic storage elements}
G11C11/5607 (Using magnetic storage elements) appears on 684 US grants and 646 published applications in this corpus.
Search patents in G11C- Granted patents
- 684
- Published applications
- 646
- Assignees
- 196
- Inventors
- 1,112
- Latest grant
- 28 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 13 | 0 |
| 1999 | 9 | 0 |
| 2000 | 7 | 0 |
| 2001 | 12 | 1 |
| 2002 | 15 | 10 |
| 2003 | 10 | 11 |
| 2004 | 22 | 20 |
| 2005 | 19 | 29 |
| 2006 | 21 | 26 |
| 2007 | 15 | 13 |
| 2008 | 18 | 28 |
| 2009 | 16 | 25 |
| 2010 | 19 | 19 |
| 2011 | 24 | 33 |
| 2012 | 31 | 39 |
| 2013 | 35 | 47 |
| 2014 | 47 | 47 |
| 2015 | 42 | 41 |
| 2016 | 54 | 44 |
| 2017 | 40 | 20 |
| 2018 | 20 | 23 |
| 2019 | 33 | 29 |
| 2020 | 32 | 37 |
| 2021 | 26 | 26 |
| 2022 | 31 | 25 |
| 2023 | 13 | 19 |
| 2024 | 23 | 19 |
| 2025 | 19 | 12 |
| 2026 | 8 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Magnetic memory and manufacturing method using field line and bit line construction28 Jul 2026US 12,694,917 B2Kioxia Corporation
- Storage device, memory cell array, method for manufacturing memory cell array, magnetic head, and electronic device16 Jun 2026US 12,658,232 B2Sony Semiconductor Solutions Corporation
- Embedded ROM-based multi-bit, multi-kernel, multi-channel weights in individual pixels for in-pixel computing16 Jun 2026US 12,659,630 B2University of Southern California
- Magnetoresistance effect element and magnetic recording array for enhanced integration density19 May 2026US 12,633,331 B2TDK Corporation
- Systems and methods for ensuring high read reliability in pre-programmed memory cells12 May 2026US 12,626,742 B2Veevx, Inc.
- Magnetic memory cell18 Jun 2026US 2026/0173402 A1Imec Vzw
- Unit cell structure for spin orbit torque magnetoresistive random access memory5 Feb 2026US 2026/0038552 A1Micron Technology, Inc.
- Ferromagnetic memory device for operating at multilevel, method for manufacturing the same, and sysytem including the same29 Jan 2026US 2026/0032919 A1UIF (University Industry Foundation), Yonsei University
- Magnetoresistive memory devices including dual free layers and methods for making and operating the same18 Dec 2025US 2025/0384909 A1SanDisk Technologies LLC
- Magnetoresistive memory devices including dual free layers and methods for making and operating the same18 Dec 2025US 2025/0384926 A1SanDisk Technologies LLC
Most cited
By later US patents
- Semiconductor signal processing device422US 8,274,841 B2Renesas Electronics Corporation · 2012
- Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers255US 6,166,948 AInternational Business Machines Corporation · 2000
- Magnetic memory element utilizing spin transfer switching and storing multiple bits246US 6,985,385 B2Grandis, Inc. · 2006
- Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements224US 7,502,249 B1Grandis, Inc. · 2009
- Spin-transfer multilayer stack containing magnetic layers with resettable magnetization213US 7,190,611 B2Grandis, Inc. · 2007