US 6,166,948 A · Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers

Abstract

An improved magnetic tunnel junction (MTJ) memory cell for use in a nonvolatile magnetic random access memory (MRAM) array has a free layer formed as two ferromagnetic films that are magnetostatically coupled antiparallel to one another by their respective dipole fields. The magnetostatic or dipolar coupling of the two ferromagnetic films occurs across a nonferromagnetic spacer layer that is selected to prevent exchange coupling between the two ferromagnetic films. The magnetic moments of the two ferromagnetic films are antiparallel to another so that the multilayer free layer structure has a reduced net magnetic moment. In the presence of an applied magnetic field, such as during writing to the cell, the moments of the two ferromagnetic films switch directions substantially simultaneously, so that the net magnetic moment of the multilayer free layer structure can have two possible orientations relative to the orientation of the fixed or pinned layer of the MTJ cell, thus resulting in the two stable magnetic states of the MTJ cell. The reduced net magnetic moment of the multilayer free layer structure reduces the magnetostatic coupling between the multilayer free layer and the pinned ferromagnetic layer in the MTJ cell, as well as the magnetostatic coupling between adjacent MTJ cells in the array. As a result, the cells, and thus the MRAM array, can be made smaller.

Claims17

Dependent claims

A magnetic tunnel junction device comprising:

a fixed ferromagnetic layer whose magnetic moment is fixed in a preferred direction in the presence of an applied magnetic field;
a free ferromagnetic multilayer comprising a first ferromagnetic film having its magnetic moment oriented in a first direction, a second ferromagnetic film having its magnetic moment oriented in a second direction substantially antiparallel to said first direction, and a nonferromagnetic spacer layer located between and in contact with said first and second ferromagnetic films and having a thickness sufficient to prevent exchange coupling between the first and second ferromagnetic films, the ferromagnetic multilayer having a net magnetic moment oriented substantially in one of said first and second directions in the absence of an applied magnetic field, and the magnetic moments of the first and second ferromagnetic films being magnetostatically coupled across the spacer layer so as to be free to rotate substantially simultaneously in the presence of an applied magnetic field so that the net magnetic moment of the ferromagnetic multilayer can be oriented in the other of said first and second directions in the presence of an applied magnetic field;
and
an insulating tunneling layer located between and in contact with the fixed ferromagnetic layer and the free ferromagnetic multilayer for permitting tunneling current between the fixed ferromagnetic layer and the free ferromagnetic multilayer.

1 more element

A magnetic tunnel junction device comprising:

a fixed ferromagnetic layer whose magnetic moment is fixed in a preferred direction in the presence of an applied magnetic field;
a free ferromagnetic multilayer comprising (a) a first ferromagnetic film having a thickness t1, a magnetization M1 and a coercivity Hc1 and having its magnetic moment oriented in a first direction, (b) a second ferromagnetic film having a thickness t2, a magnetization M2 and a coercivity Hc2 and having its magnetic moment oriented in a second direction substantially antiparallel to said first direction, the magnetic moments per unit area (M1.times.t1) and (M2.times.t2) of the first and second ferromagnetic films, respectively, being different from one another, and (c) a nonferromagnetic spacer layer located between and in contact with said first and second ferromagnetic films and having a thickness sufficient to prevent exchange coupling between the first and second ferromagnetic films, and wherein the first and second ferromagnetic films separated by said spacer layer subject each other to a dipolar field of magnitude Hd1 and Hd2, respectively, the absolute value of (Hd1-Hd2) being greater than (Hc1+Hc2);
wherein the ferromagnetic multilayer has a net magnetic moment oriented substantially in one of said first and second directions in the absence of an applied magnetic field, and the magnetic moments of the first and second ferromagnetic films are magnetostatically coupled across said spacer layer so as to be free to rotate substantially simultaneously in the presence of an applied magnetic field so that the net magnetic moment of the ferromagnetic multilayer can be oriented in the other of said first and second directions in the presence of an applied magnetic field;
and
an insulating tunneling layer located between and in contact with the fixed ferromagnetic layer and the free ferromagnetic multilayer for permitting tunneling current between the fixed ferromagnetic layer and the free ferromagnetic multilayer.

2 more elements

Dependencies are inferred from the claim text.

Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers

Life of this patent

Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers

Life of this patent

Abstract

Claims17