Magnetoresistance effect element and magnetic recording array for enhanced integration density
AssigneeTDK Corporation
InventorYohei Shiokawa
Life of this patent
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Abstract
A magnetoresistance effect element includes a wiring that extends in a first direction, a laminate that includes a first ferromagnetic layer connected to the wiring, a first conductive part and a second conductive part that sandwich the first ferromagnetic layer therebetween in a plan view in a lamination direction, and a resistor that has a geometrical center overlapping a geometrical center of the first conductive part or farther away from the laminate than the geometrical center of the first conductive part in the first direction when viewed in a plan view in the lamination direction.
Claims19
A magnetoresistance effect element comprising:
- a wiring that extends in a first direction;
- a laminate that includes a first ferromagnetic layer connected to the wiring;
- a first conductive part and a second conductive part that sandwich the first ferromagnetic layer therebetween in a plan view in a lamination direction;
- and
- a resistor,
- wherein,
- in the plan view in the lamination direction, a geometrical center of the resistor overlaps a geometrical center of the first conductive part or offsets from the geometrical center of the first conductive part in the first direction away from the laminate, and
- the first conductive part and the second conductive part sandwich the laminate in the first direction intersecting the lamination direction.
Dependencies are inferred from the claim text.