Back to results
US 2026/0032919 A1Published application
Ferromagnetic memory device for operating at multilevel, method for manufacturing the same, and sysytem including the same
AssigneeUIF (University Industry Foundation), Yonsei University
InventorsJongill HONG, Jaegyu JEONG
Life of this patent
Estimating the term…
Abstract
A ferromagnetic memory device comprises a memory cell. wherein the memory cell includes a magnetic free layer including a magnetic layer, and wherein the magnetic free layer including a magnetic anisotropy energy gradient induced within the magnetic layer by plasma ion irradiation.
Claims20
A ferromagnetic memory device comprising a memory cell,
- wherein the memory cell includes a magnetic free layer including a magnetic layer, and
- wherein the magnetic free layer including a magnetic anisotropy energy gradient induced within the magnetic layer by plasma ion irradiation.
A semiconductor device comprising a ferromagnetic memory device,
- wherein the ferromagnetic memory device includes a memory cell including a plurality of magnetic domains generated in a magnetic free layer,
- wherein a magnetic anisotropy energy gradient is induced in the magnetic free layer when ions are injected into the magnetic free layer, and the magnetic domains are formed according to the induced magnetic anisotropy energy gradient.
A method of manufacturing a ferromagnetic memory device, the method comprising:
- providing a memory device having a memory cell including a magnetic free layer having a magnetic layer;
- and
- forming a magnetic anisotropy energy gradient within the memory cell.
Dependencies are inferred from the claim text.